Singlemode optical switches based on SOI waveguideswith large cross-section

Fischer, U. H. P.; Zinke, T.; Schüppert, B.; Petermann, K.

doi:10.1049/el:19940310

Cited by 89 publications

(28 citation statements)

References 4 publications

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“…This first result showed a low operative speed due to the slowness of the thermal transients, with a bandwidth of a few tens of kilohertz. Later on, Mayer et al 3 described a 90-kHz bandwidth Mach-Zehnder modulator based on a SiGe waveguide structure, while Fischer et al 4 developed an upgrade of Treyz's device with fastest switching times of ϳ5 s. Better results were achieved with a micromachined all-silicon micromodulator showing a bandwidth beyond 1 MHz.…”

Section: Introductionmentioning

confidence: 92%

Modulation speed improvement in a Fabry–Perot thermo-optical modulator through a driving signal optimization technique

et al. 2009

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Abstract. A three-power-level method for obtaining efficient thermooptical modulation in an all-silicon waveguide-integrated Fabry-Perot thermo-optic modulator is discussed by means of a thermo-optical analytical model and demonstrated. The thermal system is represented as a two-pole model where, at every time, the temperature in the waveguide core is modified by means of a heater. This temperature is calculated and used in turn for calculating the refractive index. In this way, the impact of the driving signal shape on the device speed performance is assessed. Results clearly indicate that the application of a thermal bias holding the modulator at a higher average temperature with respect to the substrate heat sink allows increasing the modulator speed. An application-specific integrated circuit has been designed and developed in order to test the new modulation logic. The system's electronics is implemented in a 0.8 m, 5 V, CMOS process. The experimental results of this new three-power-level driver method are reported, showing the shortening of the characteristic transient times.

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Section: Introductionmentioning

confidence: 92%

Modulation speed improvement in a Fabry–Perot thermo-optical modulator through a driving signal optimization technique

et al. 2009

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“…The switching time of the device should be comparable to values given in [6,7], i.e., about 20 µs, since the thermal coefficient of GaAs is quite close to that of silicon. Recently there has been a report in [8] of a technique to enhance the heat exchange by applying a thermal bias to implement a high-speed thermo-optic modulator.…”

Section: Measurementsmentioning

confidence: 99%

“…(2) may be obtained using for theoretical estimation which is also taken from [6,7] ) denotes the thermal conductivity of the AlGaAs/GaAs structure, W is the active region width and corresponds here to the width of the W1 channel waveguide in the arm of Mach-Zehnder structure plus the widths of the two immediate lateral rows of holes, giving a total width of 1.06 µm, l active is the active length and d is the thickness of the device (2.7 µm). The simplifying approximation is also made that the entire temperature drop occurs across the epitaxial layer.…”

Section: Measurementsmentioning

confidence: 99%

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2D Photonic crystal thermo-optic switch based on AlGaAs/GaAs epitaxial structure

Camargo¹,

Chong²,

Rue³

2004

Opt. Express

125

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Abstract:The realisation of a thermo-optically controlled symmetric MachZehnder interferometer switch based on an AlGaAs/GaAs epitaxial waveguide structure operating at wavelengths in the region of λ = 1550 nm is reported. The device is based on a very compact two-dimensional photonic crystal channel waveguide structure. The measured and simulated transmission spectra for the devices are in good agreement. The π-phase shift switching power for the device is as low as 42 mW.

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“…These devices have a limited extinction ratio of about 13 dB for the best reported [1,2,4], and are bandwidth-limited to about 100 kHz [1,2], except for a special device operating up to 700 kHz [5]. Multimode interference (MMI) couplers in SOI technology have been proposed for the first time in thermo-optic 1 × 2 and 2 × 2 switches [3].…”

Section: Introductionmentioning

confidence: 99%

Intensity modulation in two Mach–Zehnder interferometers using plasma dispersion in silicon-on-insulator

2001

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We present comparative measurements of two Mach-Zehnder interferometers, one with Y-junction couplers and the other with MMI couplers, both developed in siliconon-insulator technology and using plasma dispersion effect for light phase modulation. Measurements of fiber-to-fiber losses, absorption coefficient, output intensity vs. time and extinction ratio vs. frequency have been performed at λ = 1.3 µm and at λ = 1.55 µm. Results are reported and discussed in this paper.PACS 42.25.Hz; 42.82 Bq; 42.82 Et; 42.82 Gw; 42.79Hp IntroductionMach-Zehnder interferometers (MZI) in siliconon-insulator (SOI) technology have been and still are the subject of much interest due to the high potential of silicon optoelectronic devices. Silicon is highly transparent in the infrared spectral region and its electronic capabilities are well known, making SOI a very attractive technology combining optical and electronic functions with optimal features on the same substrate.MZIs using standard Y-junction couplers based on the thermo-optic effect have already been proposed in the past. These devices have a limited extinction ratio of about 13 dB for the best reported [1, 2, 4], and are bandwidth-limited to about 100 kHz [1, 2], except for a special device operating up to 700 kHz [5]. Multimode interference (MMI) couplers in SOI technology have been proposed for the first time in thermo-optic 1 × 2 and 2 × 2 switches [3].MZIs using standard Y-junction couplers based on the plasma dispersion effect have also been proposed in the past [6,7]. A response time of 50 ns and a modulation depth of − 4.9 dB are reported in [6], while a modulation depth of 98% measured in [7].We present two MZIs, one with Y-junction-couplers and one with MMI couplers, both based on the plasma dispersion effect. A Y-junction-couplers MZI based on the thermo-optic effect has also been realized on the same substrate for performance comparison. The fiber-to-fiber insertion losses, ab-✉ Fax: +41-21/693 26 14, E-mail: paolo.dainesi@epfl.ch sorption coefficients, optical coefficients modulated intensities as functions of time, and modulation extinction ratios versus signal frequencies for these devices were measured at the wavelengths 1.3 µm and 1.55 µm. At 1.3 µm, polarizationsensitive extinction ratio measurements were also performed. Comparative results are reported and discussed in this paper.The Y-junction MZI shows the best extinction ratio reported to date, and the MMI MZI is the first device presented in this configuration. Devices descriptionThe devices were realized by etching rib waveguides in a separation by implanted oxygen (SIMOX) SOI wafer, the cross-section being shown in Fig. 1a. SOI wafers were originally developed to solve some of the problems shown in bulk silicon electronics related to the stray capacitance between the doped regions and the substrate. The SIMOX process consists basically of two steps [12]: first, a heavy dose of oxygen is implanted on a standard silicon substrate. Actually the reference parameters are: oxygen dose of 1.8...

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Singlemode optical switches based on SOI waveguideswith large cross-section

Cited by 89 publications

References 4 publications

Modulation speed improvement in a Fabry–Perot thermo-optical modulator through a driving signal optimization technique

Modulation speed improvement in a Fabry–Perot thermo-optical modulator through a driving signal optimization technique

2D Photonic crystal thermo-optic switch based on AlGaAs/GaAs epitaxial structure

Intensity modulation in two Mach–Zehnder interferometers using plasma dispersion in silicon-on-insulator

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