Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2

Abstract

Icosahedral boron phosphide (B 12 P 2 ) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B 12 P 2 for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 C for 30 s with a specific contact resistance of 2 Â 10 À4 X cm 2 , as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contact resistance was $l-4 Â 10 À4 X cm 2 after annealing over the temperature range of 500-800 C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B 12 P 2 at 700 C and a reaction layer between Ni and B 12 P 2 thinner than $25 nm at 500 C. V C 2015 American Vacuum Society.

Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

“…[ 11–13 ] However, heteroepitaxially grown on 4H‐SiC suffers from high background charge carrier concentrations with p‐type carrier concentrations of . [ 14,15 ] Therefore, a method to measure radiation effects in highly‐doped semiconductor materials is necessary.…”