Sintering

A New Route to the Production and Nanoscale Patterning of Highly Smooth, Ultrathin Zirconium Oxide Films

“…The reduction of the standard gate dielectric SiO 2 to a thickness approaching 1.5 nm results in problems such as current leakage and electron channel mobility degradation which have an adverse effect on device performance. 2 Substantial effort has therefore focused on replacing the gate SiO 2 with other higher dielectric materials such as metal oxides. This raises other issues such as compatibility with silicon and the ability of the material to withstand the conditions of semiconductor processing.…”