Sintering behavior and dielectric properties of Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; ceramics with CaMgSi&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;6&lt;/sub&gt; addition

Wang, Huanping; Feng, Siqiao; Yang, Wenyi; Ma, Heng; Jia, Guohua; Xu, Shiqing

doi:10.2109/jcersj2.120.268

Cited by 3 publications

(3 citation statements)

References 19 publications

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“…As it is known, calcium silicate has mainly two normal modifications, one is the low-temperature-phase wollastonite (b-CaSiO 3 ), and the other is the high temperature phase pseudo-wollastonite (a-CaSiO 3 ) [13,14]. b-CaSiO 3 ceramics have been investigated by the traditional solid-state process and possesses microwave dielectric properties of e r = 6.59 and Q 9 f = 13,109 GHz [15]. But, the sintering temperature range of pure bCaSiO 3 ceramic is very narrow.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and microwave dielectric properties of TiO2-doped pseudo-wollastonite ceramics

Liu

Hao

et al. 2014

J Mater Sci: Mater Electron

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The effects of TiO 2 addition on the densification, microstructure and microwave dielectric properties of pseudo-wollastonite ceramics (a-CaSiO 3 ) have been investigated. The X-ray diffraction (XRD) patterns results indicate that samples exhibit a two-phase system, which has a wollastonite-structured a-CaSiO 3 primary phase associated with a CaTiSiO 5 minor phase. However, the TiO 2 addition undermines the microwave dielectric properties because of the poor quality factor of the secondary phase of CaTiSiO 5 , which can inhibit the growth of a-CaSiO 3 grains by surrounding their boundaries. The a-CaSiO 3 ceramics containing 2 wt% of TiO 2 sintered at 1,300°C showed excellent microwave dielectric properties: an e r value of 7.86, a quality factor Q 9 f value of 16,491 GHz, and a s f value of 0.76 ppm/°C.

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Section: Introductionmentioning

confidence: 99%

Microstructure and microwave dielectric properties of TiO2-doped pseudo-wollastonite ceramics

Liu

Hao

et al. 2014

J Mater Sci: Mater Electron

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“…Thus, new low cost, low loss substrates may be required. Al2O3 has very low dielectric loss/high quality factor (Qf > 100,000) and suitable r (10) but it is expensive to produce with a high sintering temperature (>1500 o C) and is difficult to directly integrate [10]. Al2O3 antenna chips are fabricated separately and mechanically attached as a standalone component.…”

Section: Introductionmentioning

confidence: 99%

High quality factor cold sintered Li2MoO4BaFe12O19 composites for microwave applications

et al. 2019

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Ceramics-ceramic composites in the series (1-x)Li2MoO4-xBaFe12O19 (LMO-BF12, 0.00≤x≤0.15) have been cold sintered at 120 o C and their structure and properties characterized. X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) confirmed that compositions were dual phase and had a dense microstructure. Composites in the xBF12-(1-x)LMO (0.0≤x≤0.15) series resonated at MW frequencies (~6GHz) with 5.6≤r≤5.8 and Qf =16,000-22,000 GHz, despite the black colour of compositions with x > 0. The permeability of the composites was measured in the X band (~8 GHz) and showed an increase from 0.94 (x=0.05) to 1.02 (x=0.15). Finite element modelling revealed that the volume fraction of BF12 dictates the conductivity of the material, with a percolation threshold at 10 vol.% BF12 but changes in r as a function of x were readily explained using a series mixing model. In summary, these composites are considered suitable for the fabrication of dual mode or enhanced bandwidth microstrip patch antennas.

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“…The available frequencies have therefore been extended from microwave to millimeter-wave ranges because large quantity of information could be transported with high speed in the later range [5,6]. Generally, these dielectric materials for microwave communication require a low dielectric constant (e r \ 10), a high quality factor (Q 9 f) and a nearzero temperature coefficient of resonant frequency (s f B ±10 ppm/°C) [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Phase transition, microstructure and microwave dielectric properties of α-CaSiO3 ceramics with SiO2 addition

Liu

Hao

et al. 2014

J Mater Sci: Mater Electron

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The effect of SiO 2 addition on phase transition, microstructure and microwave dielectric properties of aCaSiO 3 ceramics was reported for the first time. The X-ray diffraction analysis confirmed that the phase transformation from cyclo-CaSiO 3 to pseudo-CaSiO 3 was inhibited with the increase of SiO 2 content. It was observed that the average grain size decreased with the increasing addition of SiO 2 by scanning electron microscope. The s f of the SiO 2 -added a-CaSiO 3 ceramics almost remained constant with the SiO 2 content increased, while the e r and Q 9 f changed obviously. The optimized properties were determined for SiO 2 6 wt% additive a-CaSiO 3 ceramics sintered at 1,350°C: e r = 7.37, Q 9 f = 33,714 GHz and s f = -11.08 ppm/°C.

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Sintering behavior and dielectric properties of Al<sub>2</sub>O<sub>3</sub> ceramics with CaMgSi<sub>2</sub>O<sub>6</sub> addition

Abstract: addition possessed dielectric properties of ¾ r = 9.83, tan ¤ = 1.5 © 10 ¹4 (1 MHz) and Q © f = 20,425 GHz ( f 0 = 12 GHz).

Cited by 3 publications

References 19 publications

Microstructure and microwave dielectric properties of TiO2-doped pseudo-wollastonite ceramics

Microstructure and microwave dielectric properties of TiO2-doped pseudo-wollastonite ceramics

High quality factor cold sintered Li2MoO4BaFe12O19 composites for microwave applications

Phase transition, microstructure and microwave dielectric properties of α-CaSiO3 ceramics with SiO2 addition

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