SiO2 etching using inductively coupled plasma

Hayashi, Shigenori; Yamanaka, Masaki; Nakagawa, Hideo; Kubota, Masafumi; Ogura, Mototsugu

doi:10.1002/(sici)1520-6432(199809)81:9<21::aid-ecjb3>3.0.co;2-3

Cited by 3 publications

(1 citation statement)

References 5 publications

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“…On the one hand, it provides high selectivity, which makes it possible to fabricate complex designs and get microscale resolution. On the other hand, silicon dioxide depositions and processing methods are well studied and do not require large resources for optimization [25][26][27]. Moreover, silicon dioxide is not susceptible to overheating during etching compared to photoresist masks and does not have a micromasking effect opposite to using metal hard masks.…”

Section: Introductionmentioning

confidence: 99%

Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization

Andronic

Sorokina

et al. 2021

Micromachines

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Advanced microsystems widely used in integrated optoelectronic devices, energy harvesting components, and microfluidic lab-on-chips require high-aspect silicon microstructures with a precisely controlled profile. Such microstructures can be fabricated using the Bosch process, which is a key process for the mass production of micro-electro-mechanical systems (MEMS) devices. One can measure the etching profile at a cross-section to characterize the Bosch process quality by cleaving the substrate into two pieces. However, the cleaving process of several neighboring deeply etched microstructures is a very challenging and uncontrollable task. The cleaving method affects both the cleaving efficiency and the metrology quality of the resulting etched microstructures. The standard cleaving technique using a diamond scriber does not solve this issue. Herein, we suggest a highly controllable cross-section cleaving method, which minimizes the effect on the resulting deep etching profile. We experimentally compare two cleaving methods based on various auxiliary microstructures: (1) etched transverse auxiliary lines of various widths (from 5 to 100 μm) and positions; and (2) etched dashed auxiliary lines. The interplay between the auxiliary lines and the etching process is analyzed for dense periodic and isolated trenches sized from 2 to 50 μm with an aspect ratio of more than 10. We experimentally showed that an incorrect choice of auxiliary line parameters leads to silicon “build-up” defects at target microstructures intersections, which significantly affects the cross-section profile metrology. Finally, we suggest a highly controllable defect-free cross-section cleaving method utilizing dashed auxiliary lines with the stress concentrators.

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Section: Introductionmentioning

confidence: 99%

Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization

Andronic

Sorokina

et al. 2021

Micromachines

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High‐aspect‐ratio oxide etching using CF₄/C₆F₁₂O plasma in an inductively coupled plasma etching system with low‐frequency bias power

Kim

Choi

Kwon

2022

Plasma Processes & Polymers

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High‐aspect‐ratio (HAR) etch of SiO2 films was attempted using a low‐frequency (2 MHz) bias power in an inductively coupled plasma (ICP) system using heptafluoroisopropyl pentafluoroethyl ketone (C6F12O) gas, which has a lower global warming potential (GWP). Etching characteristics of the oxide film according to changes such as the CF4/C6F12O mixing ratio, source power (13.56 MHz), and bias power were derived. To understand the etching characteristics and mechanism, optical emission spectroscopy (OES), double Langmuir probe (DLP) measurement, and X‐ray photoelectron spectroscopy (XPS) analysis were performed. We observed the vertically etched profile of the 100 nm etched line pattern with a scanning electron microscope (SEM) and at first suggested that the HAR oxide etching process is feasible using the ICP system.

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Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System

Son

Efremov

Choi

et al. 2023

Plasma Chem Plasma Process

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SiO2 etching using inductively coupled plasma

Cited by 3 publications

References 5 publications

Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization

Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization

High‐aspect‐ratio oxide etching using CF₄/C₆F₁₂O plasma in an inductively coupled plasma etching system with low‐frequency bias power

Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System

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SiO2 etching using inductively coupled plasma

Cited by 3 publications

References 5 publications

Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization

Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization

High‐aspect‐ratio oxide etching using CF4/C6F12O plasma in an inductively coupled plasma etching system with low‐frequency bias power

Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System

Contact Info

Product

Resources

About

High‐aspect‐ratio oxide etching using CF₄/C₆F₁₂O plasma in an inductively coupled plasma etching system with low‐frequency bias power