SiON as a barrier layer for depositing an Al₂O₃ thin film on Si for gate applications

Abstract

Oxynitridization of an Si wafer was conducted by rapid thermal annealing in NH

Adsorption behaviour of hydrogarnet for humic acid

“…The binding energy was normalized to the C 1s peak at 284.8 eV. The Al 2p spectra were deconvoluted into two peaks at 74.4 eV due to Al-OH [ 10 ] and 74.8 eV due to Al–O–Si [ 11 ]. Si 2p spectra were deconvoluted into two peaks at 101.8 eV due to Si-OH [ 12 ] and 102.3 eV due to Si–O–Al [ 13 ].…”

Tuning of calcium silicate ceramics for environment-friendly material applications

“…The resulting Al 2p spectra were deconvoluted into two component peaks, corresponding to AlOH at 74.4 eV 47) and AlOSi at 74.8 eV. 48) The relative ratios of the two integrated areas are shown in Table 1. The relative ratio of the AlOH group on the hydrogarnet prepared using potassium hydroxide solution was higher than that of the hydrogarnet prepared using distilled water.…”