Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates

Usman, Muhammad; Reithmaier, Johann Peter; Benyoucef, M.

doi:10.1002/pssa.201431459

Cited by 8 publications

(3 citation statements)

References 21 publications

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“…Although the growth on mask-free nanopatterned surfaces has been frequently used for site controlled fabrication of semiconductor QDs or nanoislands [55], it is also beneficial for improving the quality of continuous III-V layers [56][57][58][59]. Here, 'nanopatterned' means that the substrate surface exhibits ordered or random topographical features with dimensions well below 1 μm.…”

Section: Growth On Mask-free Nanopatterned Surfacesmentioning

confidence: 99%

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Riedl¹,

Lindner²

2017

Nanoscaled Films and Layers

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In the last decade, zinc blende structure III-V semiconductors have been increasingly utilized for the realization of high-performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III-V devices on the Si platform commonly used for CMOS electronic circuits still poses a challenge, due to the large densities of mismatch-related defects in heteroepitaxial III-V layers grown on planar Si substrates. A promising method to obtain thin III-V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three dimensions or confined close to the substrate interface by using aspect-ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10 5 cm −2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO 2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO 2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III-V layers.

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Section: Growth On Mask-free Nanopatterned Surfacesmentioning

confidence: 99%

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Riedl¹,

Lindner²

2017

Nanoscaled Films and Layers

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“…Periodic semiconductor nanostructures have been widely used to fabricate nanophotonic devices, such as photonic crystals [2, 3] and plasmonic structures [4, 5], to acquire well-controlled light propagation in nanoscale [6], which are the crucial for applications in quantum computing and quantum communication. Site-controlled quantum dots grown on periodic nanoscaled patterns have been studied for luminescence modulation [7, 8], and nanoscale-integrated structures have also attracted much interest in fabricating spin-controlled electronic devices such as magnetic-random access memory and spin modulators [9, 10]. …”

Section: Introductionmentioning

confidence: 99%

Realization of III–V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique

Huang

Liu

et al. 2017

Nanoscale Res Lett

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In this paper, we demonstrated the fabrication of one-dimensional (1D) and two-dimensional (2D) periodic nanostructures on III–V GaAs substrates utilizing laser direct writing (LDW) technique. Metal thin films (Ti) and phase change materials (Ge2Sb2Te5 (GST) and Ge2Sb1.8Bi0.2Te5 (GSBT)) were chosen as photoresists to achieve small feature sizes of semiconductor nanostructures. A minimum feature size of about 50 nm about a quarter of the optical diffraction limit was obtained on the photoresists, and 1D III–V semiconductor nanolines with a minimum width of 150 nm were successfully acquired on the GaAs substrate which was smaller than the best results acquired on Si substrate ever reported. 2D nanosquare holes were fabricated as well by using Ti thin film as the photoresist, with a side width of about 200 nm, but the square holes changed to a rectangle shape when GST or GSBT was employed as the photoresist, which mainly resulted from the interaction of two cross-temperature fields induced by two scanning laser beams. The interacting mechanism of different photoresists in preparing periodic nanostructures with the LDW technique was discussed in detail.

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“…This approach is based on the growth of III-V quantum dots (QDs) directly grown on either planar silicon 14 or on patterned surfaces. 15,16,17 Based on a GaAs/InAs core-shell geometry high-quality optical emission could be obtained. 18 By overgrowing InAs QDs with silicon a defect-free single-crystal planar silicon layer can be formed with embedded InAs nano clusters.…”

Section: Introductionmentioning

confidence: 99%

(Invited) III-V / Si Integration for Photonics

Reithmaier

Benyoucef

2016

ECS Trans.

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A brief overview is given on different approaches how to integrate III-V materials on a silicon platform for photonics with a main focus on epitaxial techniques. Beside diverse bonding and different direct epitaxial growth techniques of III-V on Si, a new potential approach based on a III-V/Si nanocomposite will be discussed, which may allow to overcome most of the basic problems in heterogeneous integration techniques, e.g., cross-contamination between III-V and Si and cost issues related to parallel efforts in III-V and Si processing. Initial results towards this new approach will be presented, such as on optically active GaAs/InAs core-shell quantum dots directly grown on Si and on monolithic integration of InAs nano clusters fully embedded into a defect free and planar Si matrix. Due to the minimization of the consumption of the involved III-V materials and the complete Si coverage, standard Si processes on a full wafer scale are feasible.

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Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates

Cited by 8 publications

References 21 publications

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Realization of III–V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique

(Invited) III-V / Si Integration for Photonics

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