Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser‐Assisted Reaction

Kim, Eunpa; Ko, Changhyun; Kim, Kyunghoon; Chen, Yabin; Suh, Joonki; Ryu, Sang Gil; Wu, Kedi; Meng, Xiuqing; Süslü, Aslıhan; Tongay, Sefaattin; Wu, Junqiao; Grigoropoulos, Costas P.

doi:10.1002/adma.201503945

Cited by 123 publications

(116 citation statements)

References 41 publications

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“…By defect engineering, the bandgap of graphene can be opened to allow switching of graphene-based transistors with a high on/off ratio [13]. The properties of TMDs can also be tailored by introduction of defects; for example, line defects can act as one-dimensional metallic stripes [28]; laser and ion irradiation can be utilized to thin and dope TMDs [29,30]; GBs influence the electroluminescence (EL) behavior of WS 2 [31]; structural defects or active edge sites can be applied in electrocatalysis [32]; and a strong photoluminescence (PL) enhancement of monolayer MoS 2 can be realized through defect engineering and oxygen bonding [33]. Hence, the investigation of defects is a crucial step for 2D materials research.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic investigation of defects in two-dimensional materials

2017

Nanophotonics

125

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Two-dimensional (2D) materials have been extensively studied in recent years due to their unique properties and great potential for applications. Different types of structural defects could present in 2D materials and have strong influence on their properties. Optical spectroscopic techniques, e.g. Raman and photoluminescence (PL) spectroscopy, have been widely used for defect characterization in 2D materials. In this review, we briefly introduce different types of defects and discuss their effects on the mechanical, electrical, optical, thermal, and magnetic properties of 2D materials. Then, we review the recent progress on Raman and PL spectroscopic investigation of defects in 2D materials, i.e. identifying of the nature of defects and also quantifying the numbers of defects. Finally, we highlight perspectives on defect characterization and engineering in 2D materials.

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Section: Introductionmentioning

confidence: 99%

Spectroscopic investigation of defects in two-dimensional materials

2017

Nanophotonics

125

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“…[1][2][3][4][5][6] Graphene has been widely studied by researchers very early for its outstanding performance such as ultrahigh carrier mobility, great thermal conductivity, and ultrahigh photoelectric response in wide range. [1][2][3][4][5][6] Graphene has been widely studied by researchers very early for its outstanding performance such as ultrahigh carrier mobility, great thermal conductivity, and ultrahigh photoelectric response in wide range.…”

mentioning

confidence: 99%

Synthesis of Submillimeter‐Scale Single Crystal Stannous Sulfide Nanoplates for Visible and Near‐Infrared Photodetectors with Ultrahigh Responsivity

Wei

et al. 2018

Adv Elect Materials

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Layered 2D semiconductor such as graphene and transitionmetal dichalcogenide (TMDs) has become intriguing building blocks during the past few years for their great performance in electronic and optoelectronic application. [1][2][3][4][5][6] Graphene has been widely studied by researchers very early for its outstanding performance such as ultrahigh carrier mobility, great thermal conductivity, and ultrahigh photoelectric response in wide range. [7] However, the intrinsic gapless bond structure of Layered 2D semiconductors, such as graphene and transition-metal dichalcogenides (TMDs), are receiving intensive attention owing to their great performance in electronic and optoelectronic application during the past few years. Among them, SnS has similar anisotropy to black phosphorus and high photoresponse in the near infrared range, rendering it as an ideal candidate for infrared photodetectors. In this work, large-size (up to 330 µm) and high-quality single-crystalline SnS nanoplates are synthesized successfully via controlled chemical vapor deposition technique and characterized by field-emission scanning electron microscopy, X-ray diffraction, confocal Raman system, atomic force microscope, transmission electron microscopy, and photoluminescence spectroscopy. Photodetectors based on as-grown SnS nanoplates are fabricated with back-gated field effect transistors (FETs) configuration, exhibiting a high mobility of 17.1 cm 2 V −1 s −1 . Photodetectors based on the SnS FETs demonstrate excellent optoelectronic performance both in visible and near-infrared spectral range. Typically, photoresponsivity of 197.7 A W −1 , photoresponse time of 39 ms, and external quantum efficiency of 6.06 × 10 4 % are exhibited under the irradiation of 405 nm laser. The wide response range and ultrahigh sensitivity make the large-area single crystal

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“…Since the binding energies of F and S are similar, it is likely that substitutional F doping at the S site is also possible in WS 2 . Experimental support for this conclusion comes from the realization of P doping in MoS 2 and WSe 2 [34,35] and Cl doping in MoS 2 and WS 2 [36]. By comparing spin degenerate and polarized calculations for the doped supercell, we obtain an energy gain of 134 meV in the spin polarized case and a total magnetic moment of 1 μ B .…”

Section: Resultsmentioning

confidence: 70%

Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS2

2016

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Silicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. In the present work, we propose a substrate (F-doped WS 2 ) that avoids detrimental effects and at the same time induces the required valley polarization, so that no further steps are needed for this purpose. The behavior is explained by proximity effects on silicene or germanene, as demonstrated by first-principles calculations. Broken inversion symmetry due to the presence of WS 2 opens a substantial band gap in silicene or germanene. F doping of WS 2 results in spin polarization, which, in conjunction with proximity-enhanced spin-orbit coupling, creates sizable spin-valley polarization.

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Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser‐Assisted Reaction

Cited by 123 publications

References 41 publications

Spectroscopic investigation of defects in two-dimensional materials

Spectroscopic investigation of defects in two-dimensional materials

Synthesis of Submillimeter‐Scale Single Crystal Stannous Sulfide Nanoplates for Visible and Near‐Infrared Photodetectors with Ultrahigh Responsivity

Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS2

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