2013
DOI: 10.1103/physrevb.88.104304
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Site-selective transient photoluminescence enhancement of impurity-trapped excitons in NaMgF3:Yb2+

Abstract: The excited-state structure of impurity-trapped excitons are measured in a multisite system. We use a two-color (UV-IR) pulsed photoluminescence enhancement technique, which probes the interlevel transitions and dynamics of impurity-trapped excitons in doped insulating phosphor materials. The technique is applied to NaMgF 3 :Yb 2+ , which exhibits emission from two charge-compensation centers with peaks at 22300 cm −1 (448 nm) and 24000 cm −1 (417 nm). The observed photoluminescence enhancement is caused by a … Show more

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Cited by 16 publications
(23 citation statements)
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“…The analysis is similar to our analysis for NaMgF 3 :Yb 2þ in Ref. 13. While for NaMgF 3 :Yb 2þ trap liberation by the IR pulse was found to be crucial to modeling the transients, it is different for SrF 2 :Yb 2þ where trap liberations only play a role for the sharp low-energy transitions (Sec.…”
Section: Exciton Dynamicssupporting
confidence: 70%
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“…The analysis is similar to our analysis for NaMgF 3 :Yb 2þ in Ref. 13. While for NaMgF 3 :Yb 2þ trap liberation by the IR pulse was found to be crucial to modeling the transients, it is different for SrF 2 :Yb 2þ where trap liberations only play a role for the sharp low-energy transitions (Sec.…”
Section: Exciton Dynamicssupporting
confidence: 70%
“…As shown in Fig. 3(b), when the G 3 (fs) parameter is set to zero, the 2 F 7=2 multiplet of 4f 13 is split into E 00 ; U 0 , and E 0 irreducible representations of the octahedral group by the cubic crystal-field. 21 As G 3 (fs) is increased, these states couple with 2 S (from the delocalized s-like electron).…”
Section: (Fs) ¼ 7278 CMmentioning
confidence: 99%
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