“…Furthermore, doping and/or surface passivation are effective methods to modulate the electronic density of bulk semiconductor materials and to tune their optical and electrical properties. So, dicyandiamide (DCD) [105,106,112], ammonium hydroxide [77,89,91,93,114,115,[129][130][131][132], diethylenetriamine (DETA) [133], urea [107], ethylenediamine (EDA) [111], dimethylformamide (DMF) [38,134] and hydrazine hydrate [123] are chosen as the nitrogen source for doping or modifying GQDs to synthesize nitrogen-functionalized GQDs, while 1,4-phenylene bis(boronic acid) [65], boron oxide (B 2 O 3 ) [76] and Na 2 B 4 O 7 [135] are employed as boron sources to prepare boron-functionalized GQDs. Also, nitrogen and sulfur co-functionalized GQDs are successfully obtained using nitrogen and sulfur containing compounds of 1-methyl-1-propylpiperidinium bis(trifluoromethylsulfonyl) imide [68], polythiophene [136] and thiourea [110].…”