Size‐ and Interface‐Modulated Metal–Insulator Transition in Solution‐Synthesized Nanoscale VO₂‐TiO₂‐VO₂ Heterostructures

Abstract

The M1 form of vanadium dioxide, which exhibits a reversible insulator-metal transition above room temperature, has been incorporated into nanoscale heterostructures through solution-phase epitaxial growth on the tips of rutile TiO nanorods. Four distinct classes of VO -TiO -VO nanorod heterostructures are accessible by modulating the growth conditions. Each type of VO -TiO -VO nanostructure has a different insulator-metal transition temperature that depends on the VO domain sizes and the TiO -VO interfacial strain characteristics.

Manipulating atomic defects in plasmonic vanadium dioxide for superior solar and thermal management

“…4e as the un-doped VO2, 18,[38][39][40] the doped VO2, 37,[41][42][43][44][45][46] the epitaxial VO2 films, [47][48][49][50] , and the heterogeneous nanocrystals. 24,[51][52][53] More importantly, the LSPR energy modulation range covers from ~0.66 to 1.16 eV with an interval of ~0.5 eV, far surpassing the best experimental results reported in other LSPR tuning methods for VO2 (Fig. 4f), including the changes of particle diameter, 18 matrix property, 18 dispersity in a matrix, 19 and applied strain.…”

Electron–Proton Co‐doping‐Induced Metal–Insulator Transition in VO2 Film via Surface Self‐Assembled l‐Ascorbic Acid Molecules

“…As a typical strongly correlated oxide, vanadium dioxide (VO 2 ) shows a characteristic thermally induced metal–insulator phase transition (MIT) at about 340 K . Across the phase‐transition boundary, the resistance of VO 2 varies up to five orders of magnitude and the infrared transmittance undergoes a pronounced switching effect, making VO 2 a promising candidate for various applications including memory materials, smart windows, and ultra‐fast optical switching devices . Many extensive studies have been conducted to modulate VO 2 MIT behavior .…”

Electron–Proton Co‐doping‐Induced Metal–Insulator Transition in VO2 Film via Surface Self‐Assembled l‐Ascorbic Acid Molecules

“…As a typical strongly correlated oxide, vanadium dioxide (VO 2 ) shows a characteristic thermally induced metalinsulator phase transition (MIT) at about 340 K. [1,2] Across the phase-transition boundary, the resistance of VO 2 varies up to five orders of magnitude and the infrared transmittance undergoes a pronounced switching effect, [3,4] making VO 2 a promising candidate for various applications including memory materials, smart windows, and ultra-fast optical switching devices. [5][6][7] Many extensive studies have been conducted to modulate VO 2 MIT behavior. [8][9][10][11][12] Controlling the charge density is an effective way to modulate compet-itively electronic phases of VO 2 .…”