Size-controlled electrical properties of sol–gel-grown nanostructured Gd0.95Ca0.05MnO3

Thakrar, Kinnari; Dhruv, Davit; Rathod, K.N.; Joshi, Zalak; Gadani, Keval; Pandya, D.D.; Markna, J. H.; Kataria, Bharat; Solanki, P.S.; Kuberkar, D. G.

doi:10.1007/s10971-016-4031-2

Cited by 37 publications

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“…contributions to explaining the role of oxide thicknesses in MOS like capacitor [22,23]. Same hysteretic behavior in C-V plot exhibited by YMnO 3 film deposited on a Si substrate reported by C.N.R.…”

Section: Resultssupporting

confidence: 58%

“…The minority response time for a thermal generation or recombination of the conventional semiconductor is > 400s [21,22]. As studied in our earlier work on the YMnO 3 based system, controls in the leakage current (smaller conductivity) in such compounds are due to the oxygen deficiency and resulting on to strong dielectric behavior in above mentioned system [23,24]. Therefore, minority charge cannot keep up with low-frequency C-V measurements even at very low frequencies due to that there is no large change in saturation capacitance values at lower frequencies in the C-V measurements [8].…”

Section: Resultsmentioning

confidence: 84%

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Charge Trap Mechanism in Hybrid Nanostructured (YMnO<sub>3</sub>) Metal-Oxide-Semiconductor (MOS) Devices

Markna

Dhruv

Rathod

et al. 2016

JNanoR

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Hybrid nanostructured Metal Oxide Semiconductor (MOS) capacitor was fabricated on silicon substrates (n-type) using chemical solution deposition with YMnO3 as an oxide layer. Electrical properties of MOS capacitor have been investigated with frequency dependence capacitance-voltage (C-V) characterization. The surface morphology of deposited layer was studied using the Atomic Force Microscopy (AFM). Hysteresis in the C-V loop and change in the values of Cminimum were described by a charge trap mechanism in the multiferroic oxide layer of MOS devices. While anomalous behavior in saturation capacitance in the inversion as well as in accumulation region and a shift in threshold voltage (VT) were explained in the vicinity of frequency depended Debye length (LDebye).

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Section: Resultssupporting

confidence: 58%