Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski–Krastanow mode

Shiramine, K.; Muto, Shunichi; Shibayama, Tamaki; Takahashi, Hiroki; Kozaki, Tamotsu; Sato, Shunsuke; Nakata, Yoshihiro; Yokoyama, Naoki

doi:10.1116/1.1605429

Cited by 10 publications

(6 citation statements)

References 18 publications

(24 reference statements)

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“…In contrast to the data in Fig. 22 In addition, Ga adatoms are not stable on the top of QDs due to strain-driving effects, 3,23,24 and this favors Ga migration away from the top of the QDs, leaving the QD uncapped or partially capped. 4 is higher when grown with As 2 rather than As 4 , particularly for samples with increased SL period number-the small differences between the results observed for N = 10 in Figs.…”

Section: Resultscontrasting

confidence: 73%

Effects of using As2 and As4 on the optical properties of InGaAs quantum rods grown by molecular beam epitaxy

Patriarche²,

Linfield

et al. 2010

Journal of Applied Physics

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Articles you may be interested inThe effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100) J. Appl. Phys. 111, 014306 (2012); 10.1063/1.3675271High-optical-quality nanosphere lithographically formed InGaAs quantum dots using molecular beam epitaxy assisted GaAs mass transport and overgrowth J. Vac. Sci. Technol. B 28, C3C9 (2010); 10.1116/1.3273941Effect of symmetric and asymmetric In 0.2 Ga 0.8 As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 μ m laser diode Improved optical properties of InAs quantum dots grown with an As 2 source using molecular beam epitaxyWe investigate the effect of the arsenic source ͑As 2 and As 4 ͒ on the optical properties of InGaAs quantum rods ͑QRs͒ grown by molecular beam epitaxy. Owing to differences in the In and Ga diffusion lengths under As 2 and As 4 fluxes, photoluminescence ͑PL͒ peak energies of the QR samples depend strongly on the As source when similar growth conditions are used. A marked improvement in the PL intensities from QR samples grown using As 4 is achieved. However, for both As 2 and As 4 , an increase of the As overpressure results in a PL intensity degradation, probably due to the formation of nonradiative recombination centers.

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Section: Resultscontrasting

confidence: 73%

Effects of using As2 and As4 on the optical properties of InGaAs quantum rods grown by molecular beam epitaxy

Patriarche²,

Linfield

et al. 2010

Journal of Applied Physics

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“…The reason for the diffusion of GaAs away from the QD cannot be explained in terms of chemical bond energies since the Ga-As bond is stronger than that of Ga-Sb (50.1 kcal mol −1 versus 45.9 kcal mol −1 ). It is rather the lattice mismatch between the GaAs and the InAs that drives the Ga adatoms away from the QD [19,20]. The strain-driven migration of InGaAs is also utilized during the formation of columnar QDs [21].…”

Section: Gaassb Capping Of Inas/gaas Qdsmentioning

confidence: 99%

An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs

Bozkurt

Ulloa

Koenraad

2011

Semicond. Sci. Technol.

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The use of Sb during the capping process of quantum dots (QDs) to tune the emission wavelength has been investigated by means of cross-sectional scanning tunneling microscopy (X-STM), photoluminescence (PL) measurements and atomic force microscopy. It is found that a capping layer of GaAsSb reduces InAs/GaAs QD decomposition during capping due to the smaller lattice mismatch with the QD and due to the surfactant effect of Sb. An Sb content of 14% in the GaAsSb layer has been found to be sufficient to eliminate the QD decomposition completely and improve the PL properties. Further increase in the Sb content causes a degradation of the PL properties. Reduction of the QD decomposition has also been achieved by soaking the QDs with Sb before the capping. Furthermore, it is shown that the segregation of In and of Sb in the Ga and the As sublattices respectively are two independent processes. Similar investigations to the use of Sb to tune InAs/InP (311B) QDs are reported. Also in this case, the use of Sb, either in the form of elemental Sb or as a GaAsSb alloy, has resulted in elimination of QD decomposition.

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“…When the thin GaAs layer is grown on the InAs QDs, Ga adatoms are driven away from the QDs due to the lattice mismatch, 11,13 leaving the top of the QDs partially uncovered. During the growth interruption it is then energetically favorable for In atoms to detach from the QD top to form a partial wetting layer on the GaAs surface 11,13 together with segregated In atoms from the previous InAs layer. The presence of the partial wetting layer is confirmed by the fact that the critical layer thickness for InAs QD rebuilding during growth of the columnar QDs is much smaller than that for formation of the first InAs seed QDs.…”

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confidence: 99%

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

Nötzel

Offermans

et al. 2004

Applied Physics Letters

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Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski–Krastanow mode

Cited by 10 publications

References 18 publications

Effects of using As2 and As4 on the optical properties of InGaAs quantum rods grown by molecular beam epitaxy

Effects of using As2 and As4 on the optical properties of InGaAs quantum rods grown by molecular beam epitaxy

An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

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