We observed the retention loss of dot domains ͑36 nm diameter͒ and square domains with sizes of 1 and 25 m 2 that were reversed by applying an electric field at an atomic force microscopy ͑AFM͒ conductive tip on a heteroepitaxial PbTiO 3 thin film with ϩ polarization in the virgin state, which was fabricated via hydrothermal epitaxy below T c . Through theoretical calculations, it was discussed that the retention loss phenomena of a domain reversed by using an AFM tip were derived from the summation of the depolarization field energy and the strain-polarization coupling energy. Since the retention loss of the reversed domain with a straight c / c domain wall by applying a homogeneous electric field did not occur, we suggest that a cylindrical domain, which has a nearly straight c / c domain wall that extends to the bottom electrode on the given thin film, would be free from the retention loss.