Indium phosphide (InP) quantum dots (QDs) are considered
the most
promising alternative for Cd and Pb-based QDs for lighting and display
applications. However, while core-only QDs of CdSe and CdTe have been
prepared with near-unity photoluminescence quantum yield (PLQY), this
is not yet achieved for InP QDs. Treatments with HF have been used
to boost the PLQY of InP core-only QDs up to 85%. However, HF etches
the QDs, causing loss of material and broadening of the optical features.
Here, we present a simple postsynthesis HF-free treatment that is
based on passivating the surface of the InP QDs with InF3. For optimized conditions, this results in a PLQY as high as 93%
and nearly monoexponential photoluminescence decay. Etching of the
particle surface is entirely avoided if the treatment is performed
under stringent acid-free conditions. We show that this treatment
is applicable to InP QDs with various sizes and InP QDs obtained via different synthesis routes. The optical properties of
the resulting core-only InP QDs are on par with InP/ZnSe/ZnS core–shell
QDs, with significantly higher absorption coefficients in the blue,
and with potential for faster charge transport. These are important
advantages when considering InP QDs for use in micro-LEDs or photodetectors.