2019
DOI: 10.1038/s41467-019-08661-9
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Size-dependent stability of ultra-small α-/β-phase tin nanocrystals synthesized by microplasma

Abstract: Nanocrystals sometimes adopt unusual crystal structure configurations in order to maintain structural stability with increasingly large surface-to-volume ratios. The understanding of these transformations is of great scientific interest and represents an opportunity to achieve beneficial materials properties resulting from different crystal arrangements. Here, the phase transformation from α to β phases of tin (Sn) nanocrystals is investigated in nanocrystals with diameters ranging from 6.1 to 1.6 nm. Ultra-sm… Show more

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Cited by 33 publications
(42 citation statements)
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References 72 publications
(89 reference statements)
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“…The lowest lying excitation in the calculated absorbance spectra for the Sn NC particle with d = 1.6 nm (Figure 4a) of 2.33 eV compares well to our recent measurements where we obtained an optical gap of 2.2 eV for NCs of comparable size. [ 16 ] From the absorbance spectra of the small NC the discrete levels, suggested from the quasiband structure discussed above, is clearly visible in the absorbance spectra. Accordingly, due to the formation of quasi‐bands for the larger Sn NC ( d = 3.4 nm) the absorbance spectra (Figure 4b) tends toward bulk spectra, [ 31 ] decreasing the lowest lying excitation to around 0.98 eV.…”
Section: Resultsmentioning
confidence: 99%
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“…The lowest lying excitation in the calculated absorbance spectra for the Sn NC particle with d = 1.6 nm (Figure 4a) of 2.33 eV compares well to our recent measurements where we obtained an optical gap of 2.2 eV for NCs of comparable size. [ 16 ] From the absorbance spectra of the small NC the discrete levels, suggested from the quasiband structure discussed above, is clearly visible in the absorbance spectra. Accordingly, due to the formation of quasi‐bands for the larger Sn NC ( d = 3.4 nm) the absorbance spectra (Figure 4b) tends toward bulk spectra, [ 31 ] decreasing the lowest lying excitation to around 0.98 eV.…”
Section: Resultsmentioning
confidence: 99%
“…Both the indirect bandgap for Si and the direct bandgap for α‐Sn are consistent with what our experimental findings suggest. [ 10,16 ]…”
Section: Resultsmentioning
confidence: 99%
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