Size‐Dependent Surface Migration of Au Alloys on Si Nanowires at Different Cooling Rates

Park, Yiseul; Kim, Hyun Ji; Lee, Jin Seok

doi:10.1002/asia.201601325

Cited by 1 publication

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References 27 publications

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“…In sum, by employing a thin Sn catalyst film of 120 nm thickness (black interval plot), the GaSb NWs show a small diameter of 17.11 ± 2.45 nm, while when using catalyst films with thicknesses of 200 nm (red interval plot), 300 nm (wine interval plot), 400 nm (blue interval plot), and 500 nm (green interval plot), the as-prepared GaSb NWs become thicker with diameters of 21.30 ± 3.92 nm, 28.26 ± 8.22 nm, 32.75 ± 13.11 nm, and 42.06 ± 15.39 nm, respectively. This phenomenon can also be found for other types of catalyst-assisted CVD-grown NWs, such as Si, , Ge, GaAs, and InAs NWs, attributed to the larger Sn catalytic seed particles with a broader size distribution formed at the beginning of NW nucleation with increasing film thickness.…”

Section: Resultsmentioning

confidence: 59%

Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors

et al. 2019

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Owing to the relatively low hole mobility, the development of GaSb nanowire (NW) electronic and photoelectronic devices has stagnated in the past decade. During a typical catalyst-assisted chemical vapor deposition (CVD) process, the adopted metallic catalyst can be incorporated into the NW body to act as a slight dopant, thus regulating the electrical properties of the NW. In this work, we demonstrate the use of Sn as a catalyst and dopant for GaSb NWs in the surfactant-assisted CVD growth process. The Sn-catalyzed zinc-blende GaSb NWs are thin, long, and straight with good crystallinity, resulting in a record peak hole mobility of 1028 cm2 V–1 s–1. This high mobility is attributed to the slight doping of Sn atoms from the catalyst tip into the NW body, which is verified by the red-shifted photoluminescence peak of Sn-catalyzed GaSb NWs (0.69 eV) compared with that of Au-catalyzed NWs (0.74 eV). Furthermore, the parallel array NWs also show a high peak hole mobility of 170 cm2 V–1 s–1, a high responsivity of 61 A W–1, and fast rise and decay times of 195.1 and 380.4 μs, respectively, under the illumination of 1550 nm infrared light. All of the results demonstrate that the as-prepared Sn-catalyzed GaSb NWs are promising for application in next-generation electronics and optoelectronics.

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