Size-dependent thermal instability and melting behavior of Sn nanowires

Shin, Ho Sun; Yu, Jin; Song, Jianwei

doi:10.1063/1.2801520

Cited by 80 publications

(68 citation statements)

References 22 publications

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“…Our results agree well with Lai [9] and Wronski et al [10]. Shin and friends [11] reported the size-dependence of melting points of tin nanowires. They have found that the melting point of Sn nanowire 60 nm in diameter is 229…”

Section: Resultssupporting

confidence: 83%

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Electrochemical Impedance of Sn Nanowire Arrays

Kaya

Aydoğmuş²,

Avcu³

2014

Acta Phys. Pol. A

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In this study, Sn nanowires were produced electrochemically in anodic aluminum oxide membranes. During the deposition process some parameters such as ion content, pH, deposition time, and temperature of solution were kept constant. The scanning electron microscope results showed that the diameters of produced tin nanowires were approximately 300 nm and their lengths were about 810 µm. Electrochemical impedance studies of Sn nanowire arrays were also studied by Iviumstat galvanostat/potentiostat system.

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Section: Resultssupporting

confidence: 83%

“…• C. We got improved results than Shin's et al [11]. So these nanowires can be applied in electronic application without altering the processing temperature.…”

Section: Resultsmentioning

confidence: 74%

Electrochemical Impedance of Sn Nanowire Arrays

Kaya

Aydoğmuş²,

Avcu³

2014

Acta Phys. Pol. A

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“…44 In reality, the morphological instabilities of a solid wire are slightly more complicated but the overall trend that is experimentally observed still remains the same. 15,16,45 For instance the average distance between Ag nanoparticles in Fig. 1e is about 750 nm, a value larger but of the same order of magnitude as 2πR (330 nm) (the difference stemming from the substrate influence, the fivefold twin structure of the wire as well coalescence which occurs after spheroidization).…”

Section: Spheroidizationmentioning

confidence: 99%

“…[15][16][17][18] This is the result of a morphological instability, called the Rayleigh instability, and is a critical issue for the long-term reliability of micro-and nanoelectronic devices. These thermal instabilities place limitations on the thermal budget that an electrode may undergo during device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Metallic nanowire networks: effects of thermal annealing on electrical resistance

et al. 2014

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a Metallic nanowire networks have huge potential in devices requiring transparent electrodes. This article describes how the electrical resistance of metal nanowire networks evolve under thermal annealing.Understanding the behavior of such films is crucial for the optimization of transparent electrodes which find many applications. An in-depth investigation of silver nanowire networks under different annealing conditions provides a case study demonstrating that several mechanisms, namely local sintering and desorption of organic residues, are responsible for the reduction of the systems electrical resistance. Optimization of the annealing led to specimens with transmittance of 90% (at 550 nm) and sheet resistance of 9.5 Ω sq −1. Quantized steps in resistance were observed and a model is proposed which provides good agreement with the experimental results. In terms of thermal behavior, we demonstrate that there is a maximum thermal budget that these electrodes can tolerate due to spheroidization of the nanowires. This budget is determined by two main factors: the thermal loading and the wire diameter. This result enables the fabrication and optimization of transparent metal nanowire electrodes for solar cells, organic electronics and flexible displays.

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“…This is a case of classical interfacial instability when dealing with liquid or solid cylinders when heated, called the Plateau-Rayleigh instability [127]. The morphological evolution of metallic NWs have been intensively investigated recently for Au [128], Cu [129], Pt [130], Sn [131], or Ag [132]. In a simple approach, perturbations with wavelengths larger than the original cylinder diameter become unstable.…”

Section: Thermal Propertiesmentioning

confidence: 99%

Flexible transparent conductive materials based on silver nanowire networks: a review

Langley¹,

Giusti²,

Mayousse³

et al. 2013

Nanotechnology

663

510

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The class of materials combining high electrical or thermal conductivity, optical transparency and flexibility is crucial for the development of many future electronic and optoelectronic devices. Silver nanowire networks show very promising results and represent a viable alternative to the commonly used, scarce and brittle indium tin oxide. The science and technology research of such networks aims at better understanding the physical and chemical properties of this nanowire-based material while opening attractive new applications.

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Size-dependent thermal instability and melting behavior of Sn nanowires

Cited by 80 publications

References 22 publications

Electrochemical Impedance of Sn Nanowire Arrays

Electrochemical Impedance of Sn Nanowire Arrays

Metallic nanowire networks: effects of thermal annealing on electrical resistance

Flexible transparent conductive materials based on silver nanowire networks: a review

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