Size distribution effects on self-assembled InAs quantum dots

Jung, S.I.; Yeo, Hyun Yang; Yun, In Sik; Leem, Jae Young; Han, Il Ki; Kim, J. S.; Lee, J. I.

doi:10.1007/s10854-007-9205-9

Cited by 9 publications

(4 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3D confined quantum-dot (QD)-based LDs (QD-LDs) can offer superior device performances, especially for high-power operations, including low-threshold current, high thermal stability and high material gain compared with those of less-confined other quantum structures, according to theoretical studies. Moreover, highly efficient lasing emission with high optical density can be achieved from QD-LDs because of narrower beam divergence than that of QW-LDs [7,8]. Ding et al Laser Physics Letters High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer reported that the pattern profile of lasing beam for a QD-LD (linewidth of ~5°) was much narrower than that of a QW-LD (~20° [7]).…”

Section: Introductionmentioning

confidence: 99%

High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer

Jo¹,

Lee²,

Han³

et al. 2014

Laser Phys. Lett.

View full text Add to dashboard Cite

We report continuous-wave (CW) operation of an InAs/InGaAsP quantum-dot (QD) heterostructure laser diode (LD) with an output power of 1.1 W at room temperature. This is the first observation on the laser output over 1 W from InAs QD-LDs fabricated on InP substrates. Also, the high-power lasing emission was successfully achieved at up to 60 °C. The improvement in the lasing characteristics can be attributed to enhancement in modal gain of QD-LDs because of the increase in spatial carrier confinement around localized QD states by using a dot-in-a-well structure and a thin GaAs strain-modulating layer.

show abstract

Section: Introductionmentioning

confidence: 99%

High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer

Jo¹,

Lee²,

Han³

et al. 2014

Laser Phys. Lett.

View full text Add to dashboard Cite

show abstract

“…Due to zero-dimensional structure and strong confinement effect of three-dimensional (3D) carrier, QD devices possess many unique properties, such as high gain, low threshold current density, high thermal stability and so on [1][2][3][4][5]. However, it is difficult to fabricate nanometer-scale QDs with high quality and good uniformity.…”

Section: Introductionmentioning

confidence: 99%

“…In past years, some papers have reported a phenomenon of bimodal size distribution of QD. For example, Jung et al [4,5] demonstrated that bimodal size distribution of indium arsenide (InAs) / gallium arsenide (GaAs) QDs grown under different temperature and In(Ga)As coverage. Arciprete reported the effect of annealing process on QD bimodal distribution [6].…”

Section: Introductionmentioning

confidence: 99%

Influence of V/III ratio on QD size distribution

Shi

Huang

et al. 2011

Front. Optoelectron. China

View full text Add to dashboard Cite

The influence of V/III ratio on the formation of quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD) is investigated by atomic force microscopy (AFM) and photoluminescence (PL) measurements. As V/III ratio increases, the density of QDs decreases accompanied by the transition of QD size distribution from bimodal (at V/III = 9) to single-modal (at V/III = 15), and then to bimodal (at V/III = 25) again, which is attributed to the change of the indium-species migration length at different V/III ratios. There are PL spectrum redshifts and the PL peak intensity decreases as V/III ratio increases.

show abstract

“…Self-organized InAs nanoscale quantum dots (QDs) embedded in a host semiconductor matrix has received a great deal of attention because of their potential applications and better device performance compared to quantum well devices. The applications of InAs/GaAs self-assembled QDs in devices such as lasers and detectors are limited by QD size inhomogeneities [1,2] and this necessitates research towards techniques to obtain homogeneous QDs. Bilayer QD (BQD) structure is a known technique to achieve uniform QD size distribution.…”

Section: Introductionmentioning

confidence: 99%

Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer

et al. 2008

View full text Add to dashboard Cite

The vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin (7-9 nm) spacer layer has been investigated by transmission electron microscopy and photoluminescence measurements. The nanoscale dots are grown by molecular beam epitaxy (MBE) at 0.028 ML s(-1) growth rate. The active dots having higher monolayer coverages showed reduced ordering due to local strain at the growth surface. Also the active dots with increased monolayer coverage is a probable cause of tunneling-assisted carrier transfer between the dot layers.

show abstract

Size distribution effects on self-assembled InAs quantum dots

Cited by 9 publications

References 15 publications

High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer

High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer

Influence of V/III ratio on QD size distribution

Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer

Contact Info

Product

Resources

About