Size Effect and Temperature Dependence of the Electrical Resistance in Bismuth Single Crystals of High Perfection

Kraak, W.; Kühl, Rainer; Thom, F.; Haefner, H.; Schmidt, Pierre

doi:10.1002/pssb.2221050219

Cited by 4 publications

(1 citation statement)

References 17 publications

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“…The bismuth sample was grown by the mould growing method [9], the six alloy samples were cut from rods grown by the zone melting method. The concentration of antimony in the specimens was determined from their specific weight.…”

Section: Experimental Set-upmentioning

confidence: 99%

Ultrasound Attenuation and Quantum Oscillations in BiSb Alloys

Dominec¹,

Míšek²,

Kraak

et al. 1984

Physica Status Solidi (b)

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J. DOMINEC et al. : Ultrasound Attenuation and Quantum Oscillations 635 phys. stat. sol. (b) 123, 635 (1984) Subject classification: 7 and 13; 21.7 Fyzikalni Ustav, Ceskolovenska Akadernie VED CSSR, Prahal) ( a ) and Sektion Physik der Humboldt-Universitet zu Berlin, Bereich Tieftemperatur-Pestk6rperphysikz) (b)The attenuation of ultrasound is measured in Biloo-zSb, alloys (z = 0, 1.2, 4, 4.5, 5, 6.4) in an experimental arrangement, where the wave vector and the magnetic field are parallel to the trigonal axis of the sample. The period and the amplitudes of the quantum oscillations, analogous t o the Shubnikov-de Haas ones, are discussed.Die Ultraschalldimpfung in Biioo-,Sb,-Legierungen (z = 0; 1,2; 4; 4,5; 5; 6,4) wird in einer experimentellen Anordnung, bei der der Wellenvektor und das Magnetfeld parallel zur trigonalen Achse der Probe sind, gemessen. Die Periode und Amplitude der Quantenoszillationen, die analog den Shubnikov-de Haas-Oszillationen sind, w-erden diskutiert.*) Na Slovance, 18040 Praha %Liben, GSSR. 2, Hessische Str. 2, DDR-1040 Berlin, GDR. 41.

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Section: Experimental Set-upmentioning

confidence: 99%

Ultrasound Attenuation and Quantum Oscillations in BiSb Alloys

Dominec¹,

Míšek²,

Kraak

et al. 1984

Physica Status Solidi (b)

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Investigation of the Charge Carrier Scattering in Bi under High Hydrostatic Pressure

Kraak

Herrmann

Haupt

1982

Physica Status Solidi (b)

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A det.ailed and precise measurement is given of the temperature dependence of the electrical resistivity of bismuth in the temperature range 2 K < T < 77 K. Under high hydrostatic pressure the Fermi energy is varied over a wide range. From the obtained temperature dependence of the electrical resistivity -a linear dependence for temperatures > 20 K and a T2 dependence a t lower temperatures -as well as the characteristic dependence of the strength of the linear and quadratic terms from the electron Fermi energy, it is suggested that a t temperatures > 20 K the resistivity is dominated by electron-phonon scattering, however, a t lower temperatures a contribution due to carrier-carrier scattering may be significant. Es werden detaillierte und genaue Nessungen der Temperaturabhiingigkeiten des elektrischen

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Role of boundary roughness in the electronic transport of Bi nanowires

Huber

Nikolaeva

Gitsu

et al. 2008

Journal of Applied Physics

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We present a study of electronic transport in 200 nm diameter bismuth nanowire arrays embedded in an alumina matrix where the nanowires are oriented preferentially with the trigonal crystalline axis parallel to the wire length. The study is based on measurements of the resistance and thermopower over a wide range of temperatures (4–300 K) as well as of magnetoresistance for fields of up to 9 T. The Fermi energies are obtained from the Landau level spectrum; results show that the wires have the intrinsic electron and hole concentrations. At high temperatures, the mobilities are temperature dependent and the electron mobility is several orders of magnitude larger than that of holes. This nanowire mobility behavior, which is also observed in the bulk, is attributed to carrier-phonon scattering. At low temperatures, the mobilities are temperature independent and roughly the same for electrons and holes. An interpretation in terms of boundary roughness scattering is proposed.

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Size Effect and Temperature Dependence of the Electrical Resistance in Bismuth Single Crystals of High Perfection

Cited by 4 publications

References 17 publications

Ultrasound Attenuation and Quantum Oscillations in BiSb Alloys

Ultrasound Attenuation and Quantum Oscillations in BiSb Alloys

Investigation of the Charge Carrier Scattering in Bi under High Hydrostatic Pressure

Role of boundary roughness in the electronic transport of Bi nanowires

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