Size effect in the low-field Hall coefficient of single-crystal copper films

Sakamoto, Isao; Fukuhara, M.; Koide, Y.; Yonemitsu, K.

doi:10.1007/bf00681636

Cited by 2 publications

(5 citation statements)

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“…The thickness dependence of the resistivity, being almost insensitive to electron symmetry, remains nearly unchanged in comparison with free-electron models. Even for monocrystalline Cu films its qualitative behaviour is independent of the lattice orientation [26,30]. On application of the interpolation scheme given above (see figure 7 ) , the mean thickness dependence of resistivity is in very good agreement with the Fuchs model.…”

Section: Discussionsupporting

confidence: 58%

“…The Fermi surfaces of the individual layers are [ l l l ] , [110] and [loo] oriented. The total Hall coefficient of the configuration is calculated according to [27]: The calculation of RH for each layer within the semi-classical treatment of diffuse surface scattering ( p = 0) according to [26]…”

Section: Dominant Surface Scattering-polycrystalline Cu Filmsmentioning

confidence: 99%

“…These electrons, which determine mainly the Hall coefficient and conductivity, are increasingly scattered at the surfaces because of their enhanced k,component. As a consequence, anisotropic semi-classical surface scattering according to [26] assumes an increasingly isotropic character. An isotropic s ( k ) , however, in connection with the real Fermi surface of Cu, should also lead to RH = -5.2 x lo-'' m3 C-' [20].…”

Section: Dominant Surface Scattering-polycrystalline Cu Filmsmentioning

confidence: 99%

“…Figure 6. ( a )Hall coefficient RFi as a function of reduced thickness d / l , (Io is the mean free path of bulk Cu) according to[26] for differently oriented Fermi surfaces with respect to the surface normal; diffuse surface scattering was assumed ( p = 0). ( b ) , (c) Differently oriented Fermi surfaces of Cu with respect to the film surface normal n: hatched areas mark electrons moving in the film plane and contributing mainly to conductivity and the Hall coefficient.…”

mentioning

confidence: 99%

“…Change from dominant grain boundary to dominant surface scattering determining the thickness dependence of RH of polycrystalline Cu films in the case of anisotropic band structure: 0, experimental values for a Cu multilayer film; -,---. values of RH in the limits of dominant grain boundary scattering for process 1, dominant surface scattering interpolated according to[26] for process 2 and dominant isotropic surface scattering for process 3.…”

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Hall coefficient and resistivity of thin polycrystalline Cu films-contributions of band structure

Gogl

Vancea

Hoffmann

1990

J. Phys.: Condens. Matter

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Polycrystalline Cu films were produced on Cr-precoated glass substrates in the thickness range 2-40 nm at T=300 K. In situ measurements of transversal Hall coefficient and resistivity were carried out as a function of film thickness. This thickness dependence of the film structure was investigated by transmission electron microscopy and electron diffraction. While the thickness-dependent resistivity is consistent with free-electron models, the behaviour of the Hall coefficient measured at very low thicknesses (3-10 nm) is in striking qualitative contrast to the predictions of such models. This is explained by taking into account the anisotropic band structure of Cu with respect to surface and grain boundary scattering and the change in the density of states at very low thicknesses.

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Section: Discussionsupporting

confidence: 58%

Section: Dominant Surface Scattering-polycrystalline Cu Filmsmentioning

confidence: 99%

Section: Dominant Surface Scattering-polycrystalline Cu Filmsmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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