Size effect of the silicon carbide Young's modulus

3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this material depend strongly on the material quality, the defect density, and the stress. For this reason, the use of SiC in Si-based microelectromechanical system (MEMS) fabrication techniques has been very limited. In this work, the complete characterization of Young’s modulus and residual stress of monocrystalline 3C-SiC layers with different doping types grown on <100> and <111> oriented silicon substrates is reported, using a combination of resonance frequency of double clamped beams and strain gauge. In this way, both the residual stress and the residual strain can be measured independently, and Young’s modulus can be obtained by Hooke’s law. From these measurements, it has been observed that Young’s modulus depends on the thickness of the layer, the orientation, the doping, and the stress. Very good values of Young’s modulus were obtained in this work, even for very thin layers (thinner than 1 mm), and this can give the opportunity to realize very sensitive strain sensors.

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“…In Figure 15 and Figure 16 , we compared our results with other data reported in previous papers [ 29 , 30 , 31 , 32 , 33 , 34 , 35 ].…”

Section: Discussionmentioning

confidence: 85%

Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon

et al. 2021

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“…As a consequence, γ n is assumed to be constant for the present analysis. Recent investigations of 3C-SiC (111) bridges [43] showed that γ n tends to be constant even for higher strains. As this finding is not directly applicable to ScAlN bridges, separate studies for the present material system are needed.…”

Section: Modal Analysismentioning

confidence: 99%

Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory

Krey

Hähnlein

Tonisch

et al. 2020

Sensors

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Magnetoelectric sensors provide the ability to measure magnetic fields down to the pico tesla range and are currently the subject of intense research. Such sensors usually combine a piezoelectric and a magnetostrictive material, so that magnetically induced stresses can be measured electrically. Scandium aluminium nitride gained a lot of attraction in the last few years due to its enhanced piezoelectric properties. Its usage as resonantly driven microelectromechanical system (MEMS) in such sensors is accompanied by a manifold of influences from crystal growth leading to impacts on the electrical and mechanical parameters. Usual investigations via nanoindentation allow a fast determination of mechanical properties with the disadvantage of lacking the access to the anisotropy of specific properties. Such anisotropy effects are investigated in this work in terms of the Young’s modulus and the strain on basis of a MEMS structures through a newly developed fully automated procedure of eigenfrequency fitting based on a new non-Lorentzian fit function and subsequent analysis using an extended Euler–Bernoulli theory. The introduced procedure is able to increase the resolution of the derived parameters compared to the common nanoindentation technique and hence allows detailed investigations of the behavior of magnetoelectric sensors, especially of the magnetic field dependent Young‘s modulus of the magnetostrictive layer.

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“…The temporal duration of a switch's release is observed to exhibit an elongation ranging from 5% to 13% when compared to switches based on planar cantilever configurations. The utilization of RF MEMS switches has been identified across various disciplines (Nakajima et al, 2017;Shen et al, 2021;Kurmendra and Kumar, 2021a;Riverola et al, 2016a;Hähnlein et al, 2017). Casimir's force increases as the square root of the inverse of the square of the gap (Koul and Dey, 2022;Duan and Rach, 2013;Tsai and Li, 2022).…”

Section: Introductionmentioning

confidence: 99%

Sub-0.3 volt amorphous metal WNx based NEMS switch with 8 trillion cycles

Mayet,

Muqeet,

Alhashim

et al. 2024

Front. Mater.

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Introduction: The mechanical nature of nanoelectromechanical (NEM) switches makes them sluggish yet desirable for ultra-low-power, harsh environment applications. Two- and three-terminal NEM switches have been demonstrated using onedimensional, two-dimensional, and thin films, but sub-0.3 V operation with improved mechanical and electrical reliability is still elusive.Method: This study presents WNxnano-ribbon-based NEM sensor switches that operate at 0.6 V, 30 nanosecond switching time, 8 trillion cycles, and 0.5 mA ON current with less than 5 kΩ ON resistance, without stiction, mechanical welding, or short circuits. WNx’s high Young’s modulus gives it great elasticity and mechanical restoring force, which may overcome van der Waal and capillary forces.Results and Discussion: With its high Young’s modulus, the device’s nanoscale size facilitated low operating voltage. WNxnano-ribbon without grain boundaries is amorphous and more mechanically strong. Hammering and high current flow may destroy the nano-ribbon contact surface and interface, which is practically immaculate. Pull-out time (dominant delay factor) is 0 owing to high Young’s modulus, hence hysteresis loss and delay are absent. Elasticity and Young’s modulus increase speed.

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Size effect of the silicon carbide Young's modulus

Cited by 10 publications

References 59 publications

Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon

Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon

Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory

Sub-0.3 volt amorphous metal WNx based NEMS switch with 8 trillion cycles

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