We report on the thermal stability of epitaxial cubic-TiN/(Al,Sc)N metal/semiconductor superlattices for potential plasmonic, thermoelectric, and hard coating applications.TiN/Al 0.72 Sc 0.28 N superlattices were annealed at 950 °C and 1050 °C for 4, 24, and 120 hours, and the thermal stability was characterized by high-energy synchrotron-radiation based 2D x-ray diffraction, high-resolution (scanning) transmission electron microscopy (HR(S)/TEM), and energy dispersive x-ray spectroscopy (EDX) mapping. The TiN/Al 0.72 Sc 0.28 N superlattices were nominally stable for up to 4 hours at both 950 °C and 1050 °C. Further annealing treatments for 24 hours and 120 hours at 950 °C led to severe interdiffusion between the layers and the metastable cubic-Al 0.72 Sc 0.28 N layers partially transformed into cubic-Al 0.72-x Sc 0.28 N and thermodynamically stable hexagonal-AlN phases with the h-AlN grains displaying two epitaxial variants with respect to c-TiN and c-Al 0.72-x Sc 0.28 N. EDX mapping suggests that scandium has a higher tendency for diffusion in TiN/(Al,Sc)N than titanium or aluminum. Our results indicate that the kinetics of interdiffusion and the cubic to hexagonal phase transformation play a major role when designing TiN/(Al,Sc)N superlattices for high temperature applications.