Size effects in electron transport in metals

Brändli, G.; Olsen, J.L.

doi:10.1016/0025-5416(69)90046-9

Cited by 76 publications

(18 citation statements)

References 154 publications

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“…The temperature dependence of R e (T) between 20 and 295 K has been computed for a value of the thickness, 1156 Å. 12 Results are presented in Fig. 6.…”

Section: ͑23͒mentioning

confidence: 99%

High-frequency surface acoustic wave devices at very low temperature: Application to loss mechanisms evaluation

Habti

Baudin

Bigler

et al. 1996

The Journal of the Acoustical Society of America

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Previous work on high-performance bulk wave resonators in the frequency range of 5 to 25 MHz has shown that, by cooling to liquid helium temperature, acoustic losses become negligible. Therefore other sources of losses can be precisely measured. A similar approach is followed in the present work for high-frequency surface wave resonators. Experiments have been performed at 416 MHz on quartz devices. It is shown that for surface waves propagating in a good surface acoustic wave ͑SAW͒ resonator an important source of acoustic loss is due to intrinsic acoustic losses. By cooling the device to below 30 K, the quality factor Q shows a T Ϫ4 dependence characteristic of intrinsic acoustic losses. Below 4-10 K a plateau region is reached. High Q values in the range of 1.5ϫ10 5 have been obtained at 4.2 K for 416-MHz devices, yielding a Qϫ f product of 7.5ϫ10 13 almost as good as for cooled bulk devices. Another set of measurements on a lithium niobate ͑LiNbO 3 ͒ resonator at 847 MHz does not give a significant increase of quality factor Q at low temperature. This is due to the presence of other loss mechanisms not related to intrinsic acoustic losses because the LiNbO 3 resonator operates in a leaky mode rather than a Rayleigh mode. The applications of the method to the characterization of new kinds of SAW resonators will be helpful for optimizing high-Q surface wave resonators at high frequencies, based on new modes or new materials.

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“…The temperature dependence of R e (T) between 20 and 295 K has been computed for a value of the thickness, 1156 Å. 12 Results are presented in Fig. 6.…”

Section: ͑23͒mentioning

confidence: 99%

High-frequency surface acoustic wave devices at very low temperature: Application to loss mechanisms evaluation

Habti

Baudin

Bigler

et al. 1996

The Journal of the Acoustical Society of America

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“…The resistivities were respectively 150 and 500 nΩm, which is between 5 and 6 times higher than bulk values. This is typical for very thin films with high surface and grain boundary scattering 9,10 . In addition to low melting point metals we have also made nanostructures with tantalum, which has a very high melting point at 3017 °C.…”

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confidence: 90%

Nanopatterning on Nonplanar and Fragile Substrates with Ice Resists

et al. 2012

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Electron beam (e-beam) lithography using polymer resists is an important technology that provides the spatial resolution needed for nanodevice fabrication. But it is often desirable to pattern non-planar structures on which polymeric resists cannot be reliably applied. Furthermore, fragile substrates such as free-standing nanotubes or thin films cannot tolerate the vigorous mechanical scrubbing procedures required to remove all residual traces of the polymer resist. Here we demonstrate several examples where e-beam lithography using an amorphous ice resist eliminates both of these difficulties and enables the fabrication of unique nanoscale device structures in a process we call ice lithography1,2. We demonstrate the fabrication of micro and nanostructures on the tip of atomic force microscope probes, micro cantilevers, transmission electron microscopy grids, and suspended single-walled carbon nanotubes. Our results show that by using amorphous water ice as an e-beam resist, a new generation of nanodevice structures can be fabricated on non-planar or fragile substrates.

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“…The general topic of dc size effects in metals is the subject of an excellent review by Brandli and Olsen [89]. Three parameters appear at least implicitly in all dc size effects theories: the ratio K = d/b, of the characteristic specimen dimension to the bulk electronic mean free path; the specularity parameter, p, which is the fraction of electrons specularly reflected from the surface; and the product pb b for the bulk metal, which should be a constant independent of size or temperature.…”

Section: Size Effectsmentioning

confidence: 99%

“…Figure 3.5 shows the measured versus the bulk residual resistivity ratio for copper wires of quite reasonable size. One should also note that a magnetic field applied to a metal showing a significant size effect may cause a dramatic decrease in the measured low temperature resistivity [89]. …”

Section: Size Effectsmentioning

confidence: 99%

Electrical properties of materials and their measurement at low temperatures

Fickett¹

1982

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Size effects in electron transport in metals

Cited by 76 publications

References 154 publications

High-frequency surface acoustic wave devices at very low temperature: Application to loss mechanisms evaluation

High-frequency surface acoustic wave devices at very low temperature: Application to loss mechanisms evaluation

Nanopatterning on Nonplanar and Fragile Substrates with Ice Resists

Electrical properties of materials and their measurement at low temperatures

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