2020
DOI: 10.1109/jsen.2020.2987627
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Size Independent Sensitivity to Biomolecular Surface Density Using Nanoscale CMOS Technology Transistors

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Cited by 11 publications
(19 citation statements)
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References 33 publications
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“…Each incubation step was followed by ( 2), ( 4) and ( 6) thorough rinsing and end-point measurements using 1.5 mM PBS for both FET as well as SPR. This ensured similar incubation as well measurement conditions for FETs and Biacore 3000 reference measurements [13], [17].…”
Section: Biacore Setup and Protocolmentioning
confidence: 99%
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“…Each incubation step was followed by ( 2), ( 4) and ( 6) thorough rinsing and end-point measurements using 1.5 mM PBS for both FET as well as SPR. This ensured similar incubation as well measurement conditions for FETs and Biacore 3000 reference measurements [13], [17].…”
Section: Biacore Setup and Protocolmentioning
confidence: 99%
“…The FETs in this work were inversion-mode p-channel devices fabricated completely in a CMOS pilot line [12], [13]. They were fabricated on 300 mm silicon-on-insulator (SOI) wafers (supplied by Soitec) with a 145 nm thick buried oxide (BOX) and 88 nm thick silicon device layer (resistivity ∼12 cm).…”
Section: B Device Fabricationmentioning
confidence: 99%
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“…This potential drop determines the threshold voltage of a liquid-gated FET, 10 T h i s c o n t e n t i s which can be used to monitor the biomolecule signal. 11 In the diffuse layer of the EDL, the concentration of electrolyte ions…”
mentioning
confidence: 99%
“…11 The finFETs were p-channel devices fabricated using CMOS technology as described previously. 11,33 The silicon channel thickness was approximately 20 nm. Fin widths ranged from 60 to 1000 nm, and lengths ranged from 450 to 3000 nm.…”
mentioning
confidence: 99%