Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System

Nakamine, Yoshifumi; Inaba, Naoki; Kodera, Tetsuo; Uchida, Ken; Pereira, Rui N.; Stegner, Andre R.; Brandt, Martin S.; Stutzman, Martin; Oda, Shunri

doi:10.7567/jjap.50.025002

Cited by 7 publications

(3 citation statements)

References 24 publications

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“…For example, the growth is suppressed at a high plasma power because of the termination of the surface of SiNCs by H radicals. 8) Nevertheless, the relationship between SiNC size and emission duration does not change under different conditions.…”

Section: Resultsmentioning

confidence: 98%

“…Silicon nanocrystals (SiNCs) have attracted much attention owing to their unique electrical and optical properties 1,2) derived from their quantum confinement effects. 3) SiNCs can be fabricated at room temperature [4][5][6][7][8][9] and they have potential for low-cost mass production. 10,11) There are many promising applications of SiNC-based devices, such as single-electron transistors, 12) light-emitting devices, [13][14][15] thin-film transistors, 16) floating-gate memories, 17) electron emitters, 18) quantum information processing devices, 19) and high-efficiency solar cells.…”

Section: Introductionmentioning

confidence: 99%

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In situ monitoring of silicon nanocrystal formation with pulsed SiH₄supply by optical emission spectroscopy of Ar plasma

Ikemoto¹,

Nakamine²,

Kawano³

et al. 2014

Jpn. J. Appl. Phys.

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The time evolution of the optical emissions of Ar plasma during silicon nanocrystal (SiNC) fabrication using a pulsed SiH4 supply is studied. The enhancement of Ar emission with a duration longer than the ON time of the pulsed SiH4 supply is observed owing to the formation of SiNCs in the plasma. This enhancement can be explained in terms of the increase in the number of high-energy electrons caused by electron attachments to SiNCs. The size and generation rate of SiNCs clearly correlate with the duration and intensity of the enhanced emission even when the Ar flow rate or the plasma power is changed. On the basis of this relationship, the size and density of SiNCs can be predicted during the fabrication by monitoring the enhanced emission.

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Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

In situ monitoring of silicon nanocrystal formation with pulsed SiH₄supply by optical emission spectroscopy of Ar plasma

Ikemoto¹,

Nakamine²,

Kawano³

et al. 2014

Jpn. J. Appl. Phys.

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“…Nc-Si particles of 10 nm diameter are prepared using a VHF plasma chemical vapor deposition (VHF-CVD) system with a VHF (144 MHz) plasma cell, an ultrahigh-vacuum (UHV) chamber, and a gas control system. 7,25) Silane (SiH 4 ) and argon (Ar) gases are used to form the plasma. The deposition of nc-Si is described below.…”

Section: Experimental Methodsmentioning

confidence: 99%

Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method

Yamazaki

Nakamine

Ran

et al. 2015

Jpn. J. Appl. Phys.

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Printable technologies using silicon nanoink, in which nanocrystalline silicon (nc-Si) quantum dots are dispersed in solvents, are promising for novel electron and photonic device applications. The dip-coating method is applied for the first time to fabricate three-dimensionally integrated structures of nc-Si quantum dots with a uniform size of 10 nm prepared by the very high frequency plasma decomposition of silane gas. We have clarified the major problem of the dip-coating method, which is the formation of stripe structures. To circumvent this problem, we have proposed two methods: coating onto line-and-space-patterned substrates and utilization of electrophoresis force. We have successfully demonstrated the control of the position and number of layers of nc-Si by using a line-and-space-patterned substrate, however, with a limited shape. We have clarified the conditions of the formation of stripe-free regions by varying applied voltage and nc-Si concentration in the electrophoresis method.

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First Principle Studies of B and P Doped Si Nanocrystals

Marri

Degoli

Ossicini

2017

Physica Status Solidi (a)

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The properties of n- and p-doped silicon nanocrystals obtained through ab initio calculations are reviewed here. The aim is the understanding of the effects induced by substitutional doping on the structural, electronic and optical properties of free-standing and matrix-embedded Si nanocrystals. The preferential positioning of the dopants and their effects on the structural properties with respect to the undoped case, as a function of the nanocrystals diameter and termination, are identified through total-energy considerations. The localization of the acceptor and donor related levels in the band gap of the Si nanocrystals, together with the impurity activation energy, are discussed as a function of the nanocrystals size. The dopant induced differences in the optical properties with respect to the undoped case are presented. Finally, the case of B and P co-doped nanocrystals is discussed showing that if carriers are perfectly compensated, the Si nanocrystals undergo a minor structural distortion around the impurities inducing a significant decrease of the impurities formation energies with respect to the single doped case. Due to co-doping, additional peaks are introduced in the absorption spectra, giving rise to a size-dependent red shift of the absorption spectra

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Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System

Cited by 7 publications

References 24 publications

In situ monitoring of silicon nanocrystal formation with pulsed SiH₄supply by optical emission spectroscopy of Ar plasma

In situ monitoring of silicon nanocrystal formation with pulsed SiH₄supply by optical emission spectroscopy of Ar plasma

Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method

First Principle Studies of B and P Doped Si Nanocrystals

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Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System

Cited by 7 publications

References 24 publications

In situ monitoring of silicon nanocrystal formation with pulsed SiH4supply by optical emission spectroscopy of Ar plasma

In situ monitoring of silicon nanocrystal formation with pulsed SiH4supply by optical emission spectroscopy of Ar plasma

Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method

First Principle Studies of B and P Doped Si Nanocrystals

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Product

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In situ monitoring of silicon nanocrystal formation with pulsed SiH₄supply by optical emission spectroscopy of Ar plasma

In situ monitoring of silicon nanocrystal formation with pulsed SiH₄supply by optical emission spectroscopy of Ar plasma