We investigated transport in Nb-InAs hybrid structures in perpendicular magnetic fields up to the quantum Hall regime. Due to the high contact quality of our samples, Andreev reflection dominates the transport properties in a range of experimental parameters. Our experiments were performed on periodic arrays of Nb filled stripes or antidots in an InAs-based 2DEG. According to geometry and field strength we observe the following effects: At low fields, up to a few flux quanta per unit cell, we find phase-coherent behavior, such as flux-periodic oscillations. At slightly higher fields, the Andreev reflection probability is determined by induced superconductivity in the 2DEG, which is gradually suppressed by an increasing magnetic field. In the arrays of Nb filled antidots we find that the commensurability peaks are suppressed since Andreev reflection restores regular motion in velocity space. Due to the high critical field of the Nb nanostructures, we can also enter the edge state regime, where we observe a pronounced increase of the amplitude of 1/B-periodic magnetoresistance oscillations. The latter can be traced to an enhanced backscattering of Andreevreflected edge channels, which contain both electrons and holes. When different material classes are combined in solid state physics, new and unexpected behavior is frequently observed. In this article we describe experiments on superconductor-semiconductor structures fabricated from the Nb-InAs material system. With semiconductors we typically associate properties such as tunable electron density and high carrier mobility, and effects such as the quantum Hall effect or ballistic transport [1,2], to name a few examples. Superconductors, on the other hand, are known for their perfect conductivity, phase coherence or the Josephson effect. If both materials are brought into contact, many new phenomena arise, which are based on Andreev reflection [3]. This process takes places at the boundary between a superconductor and a normal conductor (which can be a metal or a semiconductor). When an