Skull Melting Growth and Characterization of (ZrO2)0.89(Sc2O3)0.1(CeO2)0.01 Crystals

Abstract

(ZrO2)0.89(Sc2O3)0.1(CeO2)0.01 crystals have been grown by directional melt crystallization in a cold crucible. The chemical and phase compositions of the crystals have been characterized using energy dispersion X-ray spectroscopy (EDX), Raman scattering spectroscopy and transmission electron microscopy (TEM). The X-ray photoelectron emission method has been used for determining the valence state of the Ce ions. We show that directional melt crystallization produces an inhomogeneous ceria distribution along the crystal length. The as-grown crystals are mixtures of cubic and rhombohedral zirconia modifications. The rhombohedral phase has an inhomogeneous distribution along crystal length. Melt crystallization does not produce single-phase cubic (ZrO2)0.89(Sc2O3)0.1(CeO2)0.01 crystals. The formation of the phase structure in the crystals for different synthesis methods has been discussed.

Advanced Halide Scintillators: From the Bulk to Nano

“…Thus, such a method provides following advantages: no limit on the heating temperature (up to 3000 °C and higher), variability of the growth atmosphere (including an oxidizing one), growth of large‐sized crystals, crystallization conducted by moving an inductive heat source or gradual reduction of power, and waste‐free method (possibility of remelting unused scraps), for more details see the study by Osiko. [ 130 ] The method was widely used for purification and growth of refractory semiconductors and metals (e.g., Ge, Si, Zr), [ 132,133 ] growth of multicomponent oxides (ZrO 2 ) 0.89 (Sc 2 O 3 ) 0.1 (CeO 2 ) 0.01 crystals, [ 134 ] as well as halide crystals such as large‐sized NaI:Tl. [ 135,136 ]…”