Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Abstract

Topologically protected chiral skyrmion is an intriguing spin texture, which has attracted much attention because of fundamental research and future spintronic applications. MnSi with the non-centrosymmetric structure is well-known material hosting skyrmion phase. To date, preparation of MnSi crystals has been investigated by using special instruments with ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on sapphire substrate using a relatively low vacuum environment of conventional magnetron sputtering. Although as-grown MnSi films have polycrystalline nature, the stable skyrmion phase in a broad range of temperatures and magnetic fields is observed by magnetotransport properties including phenomenological scaling analysis of Hall resistivities contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phase, but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.