2016
DOI: 10.1016/j.tsf.2016.11.001
|View full text |Cite
|
Sign up to set email alerts
|

Slot-die coating of organic thin films for active-matrix organic light-emitting diode displays

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
5
0

Year Published

2017
2017
2022
2022

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 8 publications
(5 citation statements)
references
References 20 publications
0
5
0
Order By: Relevance
“…Many articles have reported the slot‐die coating of the hole injecting/transport layers and emissive layers, but very few present the coating of electron injecting/transport layers. [ 24–28 ] Thus, further work on the investigation of slot‐die‐coated electron injection/transport layers is crucial.…”
Section: Introductionmentioning
confidence: 99%
“…Many articles have reported the slot‐die coating of the hole injecting/transport layers and emissive layers, but very few present the coating of electron injecting/transport layers. [ 24–28 ] Thus, further work on the investigation of slot‐die‐coated electron injection/transport layers is crucial.…”
Section: Introductionmentioning
confidence: 99%
“…Among various printing and coating techniques that have been developed, the slot-die coating has significant advantages, due to the ability to deposit homogeneous thin films of functional materials with a high degree of reproducibility and with little waste. Many multilayer devices, including organic light emitting diodes (OLEDs) [10], photovoltaics [11], transistors [12], and sensors [13] have been fabricated by partially using this technique for the deposition of some layers. Further, the use of slot-die coating for the up-scaling of OLEDs and photovoltaics using roll-to-roll processing on flexible substrates has been successfully demonstrated [14,15].…”
Section: Introductionmentioning
confidence: 99%
“…This indicates that the diode exhibits a non-ideal diode behavior which can be attributed to voltage drop through the junction, unavoidable oxide layer, high interface states and series resistance (RS). The value of b higher than that of conventional Au/n-si diodes [16][17][18]. It is concluded that barrier height formed in the Au/n-Si junction can be modified by organic interlayer.…”
Section: Electrical and Photoelectrical Properties Of Au/quercetin-comentioning
confidence: 81%
“…Because, series resistance dominates the voltage drop through the semiconductor-organic interface. To estimate the series resistance and barrier height of diodes Norde proposed a modified current-voltage equation [17] by taking series resistance into account as follows…”
Section: Electrical and Photoelectrical Properties Of Au/quercetin-comentioning
confidence: 99%