2023
DOI: 10.1039/d2ce01200f
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Slow magnetic relaxation and selective luminescent probe in a 2p–3d–4f heterotrispin chain

Abstract: Three types of the radical-3d/-3d-4f heterotrispin complexes [(Cu(hfac)2)4(NIT-4-OMe-4PyPh)2](1) , {[(Cu(hfac)2)3(NIT-4-OMe-4PyPh)2]}n(2) and {[Cu(hfac)2][(NIT-4-OMe-4PyPh)]2[Ln(hfac)3]}n (Ln= Gd 3; Tb 4; Dy 5; Ho 6) (NIT-4-OMe-4PyPh = 2-[4-methoxy-3-(4-pyridinylmethoxy)phenyl]-4,4,5,5- tetramethylimidazoline-1-oxyl-3-oxide; hfac = hexafluoroacetylacetonate) have been...

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Cited by 21 publications
(8 citation statements)
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“…However, template etching would cause non-negligible nanostructure damage, which would decrease the active sites and break hollow structure to decrease solar efficiency. Hence, the porous metal–organic frameworks (MOFs) self-template auxiliarily; for instance cobalt 2-methylimidazole (ZIF-67) is deemed as an ideal pathway. Besides adjusting the diameter quantificationally via the ZIF-67 precursor, it can also provide a sufficient Co source for formation of Co-based semiconductor metallic oxide, , while constructing a hollow nanostructure via the simple calcination to decompose organic ligands thoroughly.…”
Section: Introductionmentioning
confidence: 99%
“…However, template etching would cause non-negligible nanostructure damage, which would decrease the active sites and break hollow structure to decrease solar efficiency. Hence, the porous metal–organic frameworks (MOFs) self-template auxiliarily; for instance cobalt 2-methylimidazole (ZIF-67) is deemed as an ideal pathway. Besides adjusting the diameter quantificationally via the ZIF-67 precursor, it can also provide a sufficient Co source for formation of Co-based semiconductor metallic oxide, , while constructing a hollow nanostructure via the simple calcination to decompose organic ligands thoroughly.…”
Section: Introductionmentioning
confidence: 99%
“…For all these reasons, the wide bandgap of transparent devices remains a major constraint for achieving high photovoltaic conversion, primarily due to decreased carrier transport caused by excessive potential barriers. Therefore, an easy and efficient modification approach is needed, such as metal/nonmetal doping, surface/interface microstructural modification, or other modifications. For instance, Xu et al improved light life and carrier mobility through chlorine solubility, allowing for bandgap and stability adjustment . Among these approaches, interface quantum dot’s (QD) modification has gained attention due to its adjustable potential structure to match various p–n junction gradients and high quantum yield (QY) to increase carrier concentration. , Zhang et al used CsPbBr 3 /CsPbCl 3 QD to reduce energy loss at the double interface, as the QD’s interface layer improves film quality, energy structure, and charge transfer path .…”
Section: Introductionmentioning
confidence: 99%
“…34 However, the current progress of transparent photovoltaic device has not been successful to meet the actual standards and requirements, because balancing carrier concentration and mobility has always been a bottleneck for transparent photoelectricity. 35−37 Hence, several efficient methods are being reported as a consequence of continuous research, 38,39 including surface modification and interface quantum dot modification or doping. Among these reported methods, transition layer modification with potential regulation and carrier injection has attracted considerable attention.…”
Section: Introductionmentioning
confidence: 99%
“…However, the current progress of transparent photovoltaic device has not been successful to meet the actual standards and requirements, because balancing carrier concentration and mobility has always been a bottleneck for transparent photoelectricity. Hence, several efficient methods are being reported as a consequence of continuous research, , including surface modification and interface quantum dot modification or doping. Among these reported methods, transition layer modification with potential regulation and carrier injection has attracted considerable attention. , In particular, in addition to exhibiting adjustable potential, modification of the ZnS layer can alleviate the Fermi level gradient for improving carrier transportation and demonstrate higher quantum yield (QY) and wider bandgap, which can provide an effective carrier injection while sustaining good transparency. , Kim et al introduced ZnS for improving the transparent photoelectric property of ZnO/CuI .…”
Section: Introductionmentioning
confidence: 99%