Slow Oscillations of In-plane Magnetoresistance in Strongly Anisotropic Quasi-Two-Dimensional Rare-Earth Tritellurides

Abstract

Slow oscillations of the in-plane magnetoresistance are observed in the rare-earth tritellurides and proposed as an effective tool to determine the parameters of electronic structure in various strongly anisotropic quasi-two-dimensional compounds. These oscillations do not originate from the small Fermi surface pockets, as revealed usually by the Shubnikov-de-Haas oscillations, but from the entanglement of close frequencies due to a finite interlayer transfer integral tz, which allows to estimate its value. For TbTe3 and GdTe3 we obtain the estimate tz ≈ 1 meV.PACS numbers: 71.45. Lr,72.15.Gd,73.43.Qt,74.70.Kn, The angular and magnetic quantum oscillations (MQO) of magnetoresistance (MR) is a powerful tool to study electronic properties of various quasi-twodimensional (Q2D) layered metallic compounds, such as organic metals (see, e.g., Refs. [1-4] for reviews), cuprate and iron-based high-temperature superconductors (see, e.g., [5][6][7][8][9][10][11][12][13][14]The Fermi surface (FS) of Q2D metals is a cylinder with weak warping ∼ 4t z /E F ≪ 1, where t z is the interlayer transfer integral and E F = µ is the in-plane Fermi energy. The MQO with such FS have two close fundamental frequencies F 0 ± ∆F . In a magnetic field B = B z perpendicular to the conducting layers F 0 /B = µ/ ω c and ∆F/B = 2t z / ω c , where ω c = eB z /m * c is the separation between the Landau levels (LL).The standard 3D theory of galvanomagnetic properties [16][17][18] is valid only at t z ≫ ω c and in the lowest order in the parameter ω c /t z . This theory predicts several peculiarities of MR in Q2D metals: the angular magnetoresistance oscillations (AMRO) [19][20][21] and the beats of the amplitude of MQO [17]. One can even extract the fine details of the FS, such as its in-plane anisotropy [22] and its harmonic expansion, [23,24] from the angular dependence of MQO frequencies and from AMRO. For isotropic in-plane electron dispersion, AMRO can be described by the renormalization of the interlayer transfer integral: [25] where J 0 (x) is the Bessel's function, p F = k F is the in-plane Fermi momentum, and θ is the angle between magnetic field B and the normal to the conducting layers. At t z ∼ ω c new qualitative features appear both in the monotonic and oscillating parts of MR. For example, the strong monotonic growth of interlayer MR R zz (B z ) was observed in various Q2D metals [26][27][28][29][30][31][32][33][34][35] and recently theoretically explained [35][36][37][38]. The oscillating part of interlayer MR at µ ≫ t z ω c acquires the slow oscillations [34,39] and the phase shift of beats. [39,40] These two effects are missed by the standard 3D theory [16][17][18] because they appear in the higher orders in ω c /t z .The slow oscillations qualitatively originate from the product of the oscillations with two close frequencies F 0 ± ∆F , which gives the oscillations with frequency 2∆F . Conductivity, being a non-linear function of the oscillating electronic density of states (DoS) and of the diffusion coefficient, has slow oscillat...

High mobility in a van der Waals layered antiferromagnetic metal

“…L-K fits of the temperature dependence of the oscillation amplitude above T N yield a very light cyclotron effective mass of m*() = 0.101 to 0.106m e (m e is the free electron mass) and a quantum lifetime up to 12.1 × 10 −14 s, resulting in a mobility up to 2012 cm 2 V −1 s −1 (see table S2). We notice that the SdH oscillations in GdTe 3 have previously been reported in (35). However, in this study, only the  pocket was resolved, resulting in F() ≈ 56 T and m*() ≈ 0.1m e .…”

Quantum oscillations with magnetic hysteresis observed in CeTe3 thin films

“…[26][27][28][29] The origin of this Fermi surface pocket can be attributed to the reconstruction of the Fermi surface due to the incommensurate CDW, which has been observed through photoemission spectroscopy experiments 26,28 as well as through quantum oscillations of other RTe 3 materials. 35,37,38 Although the angular dependence of the SdH oscillation has not been measured in the present study, it was already demonstrated in a similar tritelluride thin film device, i.e., GdTe 3 35 where the SdH oscillation follows 1= cos h (h is the angle between the applied magnetic field and the layer stacking direction). This indicates a highly 2D geometry of the Fermi pockets.…”

Bilayer splitting versus Fermi-surface warping as an origin of slow oscillations of in-plane magnetoresistance in rare-earth tritellurides

“…According to Eq. ( 7), with the effective electron mass m * ≈ 0.1m e determined from the temperature dependence of the amplitude of SdH oscillations 62 , and F slow ≈ 3.5T (see Fig. 5 (b,d)), one obtains t b ≈ 1meV .…”