We present real-time studies of domain nucleation and growth processes in
Sr0.58Ba0.42Nb2O6
(SBN:58) crystals doped with Cr and Yb ions, by the nematic liquid crystal (NLC)
decoration technique. Our results show that the polarization reversal in doped SBN crystals
is strongly affected by a random-field environment related to the relaxor properties of this
material. An important result is the increase of the relative contribution of transient
nucleation to polarization reversal in a constant electric field application. The sideways
domain wall motion proceeds through a pinning–depinning mechanism. This is reflected in
a very fine, irregular domain structure during polarization reversal. Registration of
domain dynamics in conjunction with the switching current recording have shown
that there are slow switching regions that do not contribute to the switching
current signals, even under electric field exceeding the coercive field. The kinetics of
polarization in SBN:58 doped crystals is described with a stretched exponential
function.