2019
DOI: 10.1364/ol.44.004103
|View full text |Cite
|
Sign up to set email alerts
|

Slowing down photocarrier relaxation in Dirac semimetal Cd3As2 via Mn doping

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

3
11
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
7
1

Relationship

4
4

Authors

Journals

citations
Cited by 21 publications
(14 citation statements)
references
References 25 publications
3
11
0
Order By: Relevance
“…The limited modulation of background carrier concentration induced by electrostatic doping may be the main reason. Employing chemical doping or the combination of both are expected to induce much higher doping concentration and are more likely to show observable impacts on dynamics of photocarriers [20,35].…”
mentioning
confidence: 99%
“…The limited modulation of background carrier concentration induced by electrostatic doping may be the main reason. Employing chemical doping or the combination of both are expected to induce much higher doping concentration and are more likely to show observable impacts on dynamics of photocarriers [20,35].…”
mentioning
confidence: 99%
“…The composite of a fast femtosecond relaxation coupled with a relatively slow relaxation component is long known to benefit other ultrafast applications as well, such as a saturable absorber. [ 41,42 ] There is no obvious dependence of the carrier lifetime on the ErAs thickness. We think that the lifetime is largely equivalent in the tested GaAs/ErAs/GaAs heterojunction system, and the difference may lie in the quality of the ErAs and ErAs/GaAs interface.…”
Section: Resultsmentioning
confidence: 99%
“…The composite of a fast femtosecond relaxation coupled with a relatively slow relaxation component is long known to benefit other ultrafast applications as well, such as a saturable absorber. [33][34] There is no obvious dependence of the carrier relaxation time on the ErAs thickness, probably because the available ErAs VB states for carrier capture is high enough and not being saturated for these thick ErAs films. More systemetic studies on thinner ErAs insertion can further reveal the relaxation mechanisms, but it is out of the scope this work.…”
Section: Resultsmentioning
confidence: 99%