Slowing of carrier cooling in hot carrier solar cells

Conibeer, Gavin; König, Dirk; Green, Martin A.; Guillemoles, Jean‐François

doi:10.1016/j.tsf.2007.12.102

Cited by 153 publications

(118 citation statements)

References 24 publications

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“…12 InN is reported to have the widest phonon band gap and lowest photonic band gap which prompt the applications in hot carrier solar cells. 13,14 Thus, it is inevitable to study the phonon structure of InN with the excitation in the IR as well as in the visible region for developing the InN based devices. However, band gap of InN falls in the IR region and the device performance is strongly influenced by the resonance phenomenon.…”

Section: 1mentioning

confidence: 99%

Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration

Madapu

Polaki

Dhara

2016

Phys. Chem. Chem. Phys.

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Section: 1mentioning

confidence: 99%

Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration

Madapu

Polaki

Dhara

2016

Phys. Chem. Chem. Phys.

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“…This interaction takes place through radiative generationrecombination processes and implies that a photon can be absorbed by pumping an electron from the VB to the CB (generation) and also that an electron can recombine with a hole by emitting a photon (luminescent photon). Because this photon can be reabsorbed again, luminescent photons and electronhole pairs stay in equilibrium through the reaction e¿,VB + hv <-• e ijC B (8) where hv represents a photon and e ¿jV B and e ¿jC B an electron in the VB and CB, respectively. This equation leads us to visualize the photons in the core material as a gas at the hot-electron temperature T h and chemical potential ¡ihv …”

Section: Core Photovoltaic Materialsmentioning

confidence: 99%

“…We emphasize that this reasoning is based on the fact that electrons in the CB are isolated from the electrons in the VB due to the absence of interband scattering processes; therefore, each set gets its own constants "a" (namely, a c and a v ) and "b" (namely, b c and b v ) that are not necessarily equal. However, as explained in the discussion that motivated (8), to have a solar cell, electrons must interact with photons and this interaction connects the VB with the CB; therefore, electrons in the VB and the CB have a temperature equal to that of the photons. We can simply designate this common temperature as T h , which implies that a c = a v .…”

Section: T Hmentioning

confidence: 99%

Electrochemical Potentials (Quasi-Fermi Levels) and the Operation of Hot-Carrier, Impact-Ionization, and Intermediate-Band Solar Cells

Martı́

Ĺuque

2013

IEEE J. Photovoltaics

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Abstract-In the framework of the so-called third generation solar cells, three main concepts have been proposed in order to exceed the limiting efficiency of single-gap solar cells: the hot-carrier solar cell, the impact-ionization or multiple-exciton-generation solar cell, and the intermediate-band solar cell. At first sight, the three concepts are different, but in this paper, we illustrate how all these concepts, including the single-gap solar cell, share a common trunk that we call "core photovoltaic material." We demonstrate that each one of these next-generation concepts differentiates in fact from this trunk depending on the hypotheses that are made about the physical principles governing the electron electrochemical potentials. In the process, we also clarify the differences between electron, phonon, and photon chemical potentials (the three fundamental particles involved in the operation of the solar cell). The in-depth discussion of the physics involved about the operation of these cells also provides new insights about the operation of these cells.

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“…Investigations into hot-carrier conversion have typically focused on highly non-equilibrium carrier collection, which aims to extract photoexcited carriers at elevated kinetic energy much more quickly than they can lose energy via thermalization with the lattice 7,8 . The efficiency of such a hot-carrier cell can theoretically approach the thermodynamic limit for solar-energy conversion of B85% (ref.…”

mentioning

confidence: 99%

Photon-enhanced thermionic emission from heterostructures with low interface recombination

et al. 2013

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Photon-enhanced thermionic emission is a method of solar-energy conversion that promises to combine photon and thermal processes into a single mechanism, overcoming fundamental limits on the efficiency of photovoltaic cells. Photon-enhanced thermionic emission relies on vacuum emission of photoexcited electrons that are in thermal equilibrium with a semiconductor lattice, avoiding challenging non-equilibrium requirements and exotic material properties. However, although previous work demonstrated the photon-enhanced thermionic emission effect, efficiency has until now remained very low. Here we describe electron-emission measurements on a GaAs/AlGaAs heterostructure that introduces an internal interface, decoupling the basic physics of photon-enhanced thermionic emission from the vacuum emission process. Quantum efficiencies are dramatically higher than in previous experiments because of low interface recombination and are projected to increase another order of magnitude with more stable, low work-function coatings. The results highlight the effectiveness of the photon-enhanced thermionic emission process and demonstrate that efficient photon-enhanced thermionic emission is achievable, a key step towards realistic photon-enhanced thermionic emission based energy conversion.

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Slowing of carrier cooling in hot carrier solar cells

Cited by 153 publications

References 24 publications

Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration

Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration

Electrochemical Potentials (Quasi-Fermi Levels) and the Operation of Hot-Carrier, Impact-Ionization, and Intermediate-Band Solar Cells

Photon-enhanced thermionic emission from heterostructures with low interface recombination

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