Sm and Mn doped enhancing the electrical properties of .68PMN–.32PT relaxor ferroelectric thin films

Abstract

Abstract(1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN–PT) has attracted attention due to its excellent electrical properties as a typical relaxor ferroelectric material. High‐quality Mn–Sm co‐doped 0.68PMN–0.32PT thin films were synthesized on the Pt/Ti/SiO2/Si substrates by sol–gel based on spin coating method. The results show that 1 mol% Mn–2 mol% Sm co‐doped PMN–PT thin films have high dielectric constant (εr ∼ 1895) and relatively low dielectric loss (tanδ ∼ .039) at 1 kHz. They also show superior ferroelectric polarization (Pmax ∼ 53.71 μC/cm2, Pr ∼ 30.85 μC/cm2) and high dielectric breakdown strength (∼1656.6 kV/cm), which are primarily due to the low leakage current density (∼10−7 A/cm2). This work suggests a practical approach to enhance the dielectricity, piezoelectricity, and ferroelectricity of PMN–PT thin films.