2019
DOI: 10.1002/rcm.8489
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Small Al cluster ion implantation into Si and 4H‐SiC

Abstract: Rationale Continuously downscaling integrated circuit devices requires fabrication of shallower p‐n junctions. The ion implantation approach at low energy is subject to low beam current due to the Coulomb repulsion. To overcome this problem cluster ions can be used for implantation. In comparison with single ions, cluster ions possess lower energy per atom and reduced Coulomb repulsion resulting in high equivalent current. Methods In this study to carry out low‐energy implantation into single crystalline silic… Show more

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Cited by 5 publications
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