Small- and large-area CIGS modules by co-evaporation

Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics: Final Technical Report, 2 October 2001 - 30 September 2005

“…An activation energy of (10±0.34) meV was derived from the thermal quenching data of the PL peak at 1.667 eV (see Figure 5-15). From the fact that this peak disappeared after Se annealing and the value of the activation energy (10 meV) reported for the Cu Ga defect by Bauknecht et al [5][6][7][8][9][10][11][12][13], this transition is assigned to the Cu Ga -V Se transition.…”

“…From the results of this study further optimization of the alternative buffer layers is needed, which includes the optimization of the deposition conditions to improve the film quality and the investigation of the effects of post-deposition annealing and light soaking on the devices. In addition, the CdS buffer layers were also deposited by using the UF baseline CBD process [1][2][3][4][5][6][7][8][9][10][11][12][13] with a deposition time of 30 or 40 minutes on the same sets of CIGS samples provided by the IEC. The CIGS/CdS cell with a deposition time of 30 minutes has a better performance with V OC =0.51V, J SC =30.5mA/cm 2 , F.F.…”

“…However, the CIGS/In(OH) x S y cell has a lower J SC due to the lower quantum efficiency than the CIGS/CdS cell in the long wavelength region [1][2][3][4][5][6][7][8]. By adding the complexing agent of acetic acid into the chemical bath, a more adherent, reproducible, homogeneous, and higher quality In(OH) x S y film [1][2][3][4][5][6][7][8][9][10][11][12][13][14] has been deposited on the glass substrates and Siemens CIGSS samples. The performance of one CIGSS cell deposited with In(OH) x S y buffer layer using acetic acid and the performance of the CIGSS cells deposited with other buffer layers are shown in Figure 1-7.…”

“…A possible physical origin of this electron trap is the Se vacancy (V Se ) [6 3]. The trap density is estimated to be 4.2×10 13 cm -3 . The DLTS scan at higher temperature showed another possible positive peak, however, the activation energy for this trap could not be resolved by heating the sample above 300 K. Therefore, it is noted that the minority traps are likely the dominant traps in the NREL sample.…”

“…k is Boltzman's constant, and h is Planck's constant. The values of all the parameters are summarized in Table 7-3 [7][8][9][10][11][12]13]. …”