2018
DOI: 10.1038/s41598-018-21433-7
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Small-Angle Twist Grain Boundaries as Sinks for Point Defects

Abstract: It is known that grain boundaries (GBs) provide sinks for defects induced into a solid by irradiation. At the same time radiation can change the atomic structure and chemistry of GBs, which in turn impacts the ability of GBs to continue absorbing defects. Although a number of studies have been reported for tilt GBs acting as defect sinks, the questions of how twist GBs evolve to absorb non-equilibrium concentrations of defects and whether GBs saturate as defect sinks for typical irradiation conditions have rem… Show more

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Cited by 19 publications
(7 citation statements)
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“…For this low-twist angle GB, the boundary is comprised of a grid of 1/6 112 partial screw dislocations with alternating regions of FCC (atoms colored in black) and HCP (atoms colored in gray) structures. Similar interfacial dislocation networks in low-twist angle GBs have been recently observed in atomistic calculations 66 . Chen et al 67 examined the GB character distribution in the Cantor alloy during recrystallization and showed a high density of twin 3 and low-angle GBs.…”
Section: Resultssupporting
confidence: 82%
“…For this low-twist angle GB, the boundary is comprised of a grid of 1/6 112 partial screw dislocations with alternating regions of FCC (atoms colored in black) and HCP (atoms colored in gray) structures. Similar interfacial dislocation networks in low-twist angle GBs have been recently observed in atomistic calculations 66 . Chen et al 67 examined the GB character distribution in the Cantor alloy during recrystallization and showed a high density of twin 3 and low-angle GBs.…”
Section: Resultssupporting
confidence: 82%
“…On this direction, the Mg 32 (Zn,Al) 49 T‐phase showed promising results, although the mechanisms behind its high radiation resistance remains as yet unknown. –The displacement damage yield must be reduced, i.e., the nucleation and growth of extended radiation‐induced defects (e.g., dislocation loops) must be suppressed in these new alloys as they can increase the hardness by facilitating the radiation‐induced precipitation, possibly resulting in severe embrittlement. Following a recent trend observed in the literature, [ 98–102 ] new alloys with reduced grain sizes should be designed as the increase in the density of sinks (grain‐boundaries) will result in less accumulation of radiation‐induced point defects within the grains.…”
Section: Discussionmentioning
confidence: 99%
“…Polycrystalline thin films are the core materials for several opto-electronic applications due to their fast fabrication and low manufacturing cost. Polycrystalline materials like Cu­(In,Ga)­Se 2 , (CIGS), CdTe, or the recent perovskite materials constitute as the photovoltaic absorbers of the growing class of thin-film solar cells, with efficiencies of more than 25% already attained with perovskite solar cells, close to those of wafer-based single-crystalline silicon. , The grain boundary (GB) properties of polycrystalline materials and the physics behind that have received great interest in the research community. GBs are the source for dangling bonds, vacancies, and voids, as well as other defects. Different grain sizes in polycrystalline materials result in high internal interfacial areas, and the boundaries in between them play a complex role in determining the optoelectronic properties of the semiconductor materials and have a great impact in the efficiency of the resulting devices. Depending on the material properties, GBs have positive and/or negative impacts on the performance of the polycrystalline material-based devices. For single-crystal silicon, the defects within the grains, such as stacking faults and dislocations for impurities, chiefly lead to recombination losses in these areas. , Typically, methylammonium lead iodide (MAPbI 3 ) perovskite thin films are polycrystalline with grain sizes ranging from 100 nm to a few microns, , and GBs are the regions with a high density of non-radiative recombination centers, which can diminish photoluminescence (PL), lifetime, and other effects. , There are a number of publications on MAPbI 3 perovskite thin films; however, the effect of the GBs on the electrical characteristics of the film and the performance of the solar cells is still the subject of intense discussion.…”
Section: Introductionmentioning
confidence: 99%