“…Polycrystalline thin films are the core materials for several opto-electronic applications due to their fast fabrication and low manufacturing cost. − Polycrystalline materials like Cu(In,Ga)Se 2 , (CIGS), CdTe, or the recent perovskite materials − constitute as the photovoltaic absorbers of the growing class of thin-film solar cells, with efficiencies of more than 25% already attained with perovskite solar cells, close to those of wafer-based single-crystalline silicon. , The grain boundary (GB) properties of polycrystalline materials and the physics behind that have received great interest in the research community. GBs are the source for dangling bonds, vacancies, and voids, as well as other defects. − Different grain sizes in polycrystalline materials result in high internal interfacial areas, and the boundaries in between them play a complex role in determining the optoelectronic properties of the semiconductor materials and have a great impact in the efficiency of the resulting devices. − Depending on the material properties, GBs have positive and/or negative impacts on the performance of the polycrystalline material-based devices. For single-crystal silicon, the defects within the grains, such as stacking faults and dislocations for impurities, chiefly lead to recombination losses in these areas. , Typically, methylammonium lead iodide (MAPbI 3 ) perovskite thin films are polycrystalline with grain sizes ranging from 100 nm to a few microns, , and GBs are the regions with a high density of non-radiative recombination centers, which can diminish photoluminescence (PL), lifetime, and other effects. , There are a number of publications on MAPbI 3 perovskite thin films; however, the effect of the GBs on the electrical characteristics of the film and the performance of the solar cells is still the subject of intense discussion.…”