Small angle X-ray diffraction study of a-Si:H/a-Ge:H multilayers: reflectivity modeling and thermal stability

Zeballos-Velásquez, Elvira; Fantini, M.C.A.

doi:10.1016/s0022-3093(96)00561-3

Cited by 5 publications

(8 citation statements)

References 27 publications

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“…The period of the multilayer is estimated to be lower than 4 nm except for the sample prepared at RT. The height of the n ¼ 1 peak decreases with the growth temperature and has a minimum at 573 K. These facts suggest that Si and Ge atoms are intermixed through the interface 10) with increasing the growth temperature. The n ¼ 1 peak becomes sharper and shifts toward lower angle at 623 K and 673 K, but the reason for such behavior is not clear at present.…”

Section: Resultsmentioning

confidence: 92%

Investigation of Thermoelectric Properties of Si/Ge Multilayer with Ultra-Heavily B Doping

et al. 2008

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structured thin films were prepared by using the ion-beam sputtering (IBS) method with changing the growth temperatures from room temperature to 873 K. Then their thermoelectric properties were estimated and the effects of boron on Si/Ge superlattice structure were investigated. It was shown from XRD spectra that samples prepared below 673 K kept the periodic structure, however at exceeding 773 K the structure was broken. Si/Ge multilayer thin films showed larger thermoelectric power than that of bulk-SiGe materials and also Si/GeB multilayer showed decreases of thermoelectric power with increasing growth temperature, which is related to the increase of carrier concentration by boron activation. As for the resistivity, since the Si/GeB multilayers had lower values of the resistivity than that of Si/Ge multilayers, a boron doping effect was identified. In both Si/Ge and Si/GeB, the resistivity had a minimum at 673 K. Since the multilayer structure holds up to this temperature, the decrease in the resistivity can be attributed to the increase in the carrier mobility of the layer with a lower band gap. As a result, Si/GeB showed the larger power factor than that of Si/Ge multilayer at 673 K.

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Section: Resultsmentioning

confidence: 92%

Investigation of Thermoelectric Properties of Si/Ge Multilayer with Ultra-Heavily B Doping

et al. 2008

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“…The thicknesses of each individual layer, as well as the period of the multilayers, from our previous works [9,10], were used as the starting values for the present simulations. First, we considered in the model of three layers a fixed size for the interface, a Gaussian distribution of roughness and the effect of the direct beam and the background.…”

Section: Resultsmentioning

confidence: 99%

“…The detailed sample's growth PECVD process are described elsewhere [9][10][11]. For both types of samples, gaseous mixtures of SiH 4 , either with CH 4 or GeH 4 inside the glow discharge chamber, were used.…”

Section: Methodsmentioning

confidence: 99%

“…Our earlier work [9,10] dealt with the experimental results on the structure of a-Si:H/a-Si 1−x C x :H and aSi:H/a-Ge:H multilayers, prepared by PECVD, where some of the relevant structural parameters were determined. Nevertheless, only one a-Si:H/a-Ge:H sample [10] was taken as an example for theoretical modeling, where different defects were considered and their contributions to the diffracted intensity were separated.…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, only one a-Si:H/a-Ge:H sample [10] was taken as an example for theoretical modeling, where different defects were considered and their contributions to the diffracted intensity were separated. In this case we analyzed the best obtained multilayer, regarding its SAXRD characterization.…”

Section: Introductionmentioning

confidence: 99%

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