2003
DOI: 10.1063/1.1622793
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Small angle x-ray scattering for sub-100 nm pattern characterization

Abstract: Characterization of sub-100 nm photolithographic patterns with nanometer scale resolution is demonstrated using small angle x-ray scattering. The transmission scattering geometry employed potentially enables high throughput measurements for future technology nodes of the semiconductor industry, organic and inorganic nanoscale devices, and three-dimensional structures. The method is demonstrated through the characterization of a series of polymer photoresist gratings using a synchrotron x-ray source. Quantities… Show more

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Cited by 90 publications
(76 citation statements)
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“…High-resolution metrologies for pattern shape characterizations are required. To meet this challenge, we are developing a set of X-ray based techniques, namely, critical-dimension small-angle X-ray scattering (CD-SAXS) [37][38][39] and specular X-ray reflectivity (SXR) [40,41]. By fitting the diffracted or specular reflected X-ray intensity, we can extract the dimensions of periodic patterns with nanometer resolution.…”
Section: Methodsmentioning
confidence: 99%
“…High-resolution metrologies for pattern shape characterizations are required. To meet this challenge, we are developing a set of X-ray based techniques, namely, critical-dimension small-angle X-ray scattering (CD-SAXS) [37][38][39] and specular X-ray reflectivity (SXR) [40,41]. By fitting the diffracted or specular reflected X-ray intensity, we can extract the dimensions of periodic patterns with nanometer resolution.…”
Section: Methodsmentioning
confidence: 99%
“…[13,14] Here, we utilize the fact that CD-SAXS and SXR can completely characterize the cross section of an imprinted pattern, nondestructively with nanometerscale resolution, while simultaneously averaging hundreds of nanostructures together for excellent statistics. A description of these shape measurements is provided in the Supporting Information, while more details have been published elsewhere; [10][11][12][13][14] here we focus on the application of these shape measurements for pattern stability. We define the stability of a nanoimprinted structure by measuring its shape change as a function of time in different environments.…”
mentioning
confidence: 99%
“…To address this challenge we are developing a suite of X-ray-based techniques to quantify pattern shape. These include critical dimension small angle X-ray scattering (CD-SAXS) [10][11][12] and specular X-ray reflectivity (SXR). [13,14] Here, we utilize the fact that CD-SAXS and SXR can completely characterize the cross section of an imprinted pattern, nondestructively with nanometerscale resolution, while simultaneously averaging hundreds of nanostructures together for excellent statistics.…”
mentioning
confidence: 99%
“…Although there is a large variety of different techniques available, ranging from direct methods like criticaldimension electron microscopy (CD-SEM) [21,22] and atomic force microscopy (AFM) [23,24] to indirect methods like X-ray small-angle scattering (SAXS) and grazing in- * contact: jan.wernecke@ptb.de cidence SAXS (GISAXS) [25][26][27], critical dimension SAXS (CD-SAXS) [28][29][30], or extreme UV (EUV) scatterometry [31,32], all of them have very specific advantages and drawbacks. Moreover, only a few of them are traceable, that is, related to the International System of Units (SI system) by an unbroken chain of comparisons with known uncertainty, which is ultimately required in order to associate uncertainty values with any measured quantity.…”
Section: Introductionmentioning
confidence: 99%