Small Atom Doping: A Synergistic Strategy to Reduce Sn_Zn Recombination Center Concentration in Cu₂ZnSnSe₄

Abstract

Table S1. Cation ratios of the metallic precursor and CZTSe samples. Hydride mass (mg) Precursor/CZTSe (Thermal Process) Cu/(Zn+Sn) Zn/Sn Cu/Zn Cu/Sn 0 Precursor (1S)

Insights into the Efficiency Improvement for CZTSSe Solar Cells with over 12% Efficiency via Ga Incorporation

“…E u is related to the structural and compositional disorder in the CZTSSe films and is represented as an absorption tail toward the band edge. [44] In our work, as shown in Figure 5e, E u is estimated from EQE spectra to be 23.1, 22.7, 22.2, and 21.9 meV for Ref-CZTSSe 1% Ga, 2% Ga, and 3% Ga-doping CZTSSe device (Figure 5e), respectively. The reduction of E u after Ga doping indicates the improved bulk and surface properties that result from the suppression of the defects and defect clusters, such as detrimental electron trapping [2Cu Zn +Sn Zn ] clusters.…”

Effect of silver doping on electrical characteristics of aluminum/HfO2/p-silicon metal-oxide-semiconductor devices

“…When HfO 2 is formed, the defects or voids in the structure can be filled with smaller atoms such as Ag. This allows the material to crystallize better [29][30][31]. The relevant shift is associated with this crystallization process.…”

Environment-friendly copper-based chalcogenide thin film solar cells: status and perspectives

“…For instance, the surface morphology of CIGS to the n-buffer layer determines the formation of carrier recombination that should be avoided. 19,116,[128][129][130][131][132] This journal is © The Royal Society of Chemistry 2023 Therefore, good crystallinity and surface morphology of the CIGS layer could enhance the performance of the solar cell because of minimum carrier recombination formation. 127…”

“…(d) Summary of PCEs of single-junction quaternary-CuCh-based solar cells with and without CdS layers 19,[130][131][132]…”