Abstract:Short-cavity InGaAsP/InP DBR lasers with integrated SOA and EAM were fabricated using a quantum well intermixing processing platform. >10mW output power and 17.5% wall-plug efficiency was achieved at 30mA. EAM extinction was >15dB at-4V.
“…A large value of k is also beneficial in the design of short-cavity DBR laser structures, where the effective penetration depth of the DBR should be minimized to reduce loss in the mirror and maximize the cavity mode spacing [3]. The formation of strong k gratings can be accomplished in several ways.…”
“…A large value of k is also beneficial in the design of short-cavity DBR laser structures, where the effective penetration depth of the DBR should be minimized to reduce loss in the mirror and maximize the cavity mode spacing [3]. The formation of strong k gratings can be accomplished in several ways.…”
“…Highly efficient short cavity integrated DBR (distributed Bragg reflector) laser/EAM (electro-absorption modulator) transmitters for C2OI applications have previously been demonstrated at 1550 nm using quantum well intermixing (QWI) [2]. Quantum well intermixing has been demonstrated as an elegant technique for integration of photonic ICs at both 1550 [3] and 980 nm [4].…”
Short-cavity InGaAs/GaAs/AlGaAs lasers with first order DBRs and integrated EAMs were fabricated using a quantum well intermixing process. >5mW output was achieved at 45mA. DC extinction was >15dB at-1.5V with efficiencies up to 20dB/V.
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