Small-mass atomic defects enhance vibrational thermal transport at disordered interfaces with ultrahigh thermal boundary conductance

Giri, Ashutosh; King, Sean W.; Lanford, W. A.; Mei, Antonio R.; Merril, Devin; Ross, Liza; Oviedo, Ron; Richards, John R.; Olson, David H.; Braun, Jeffrey L.; Gaskins, John T.; DeAngelis, Freddy; Henry, Asegun; Hopkins, Patrick E.

doi:10.48550/arxiv.1710.09440

Cited by 3 publications

(3 citation statements)

References 37 publications

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“…However, contrary to the crystalline Si/Ge structure, where these types of modes contribute >15% to TIC, the interfacial modes across the Si/SiO2 interface at 16 THz contribute <2% to TIC. These observations substantiate that, contrary to our strong understanding of thermal conductivity, 57 thermal transport across interfaces is much more intricate, 45,58,59 which is why every interface is unique, and any generalization based on prior observations to new and unexplored interfaces might be proven to be incorrect. Regions 2 and 4 are mostly comprised of partially extended modes on the SiO2 side.…”

Section: Textmentioning

confidence: 52%

Interface conductance modal analysis of a crystalline Si-amorphous SiO2 interface

Gordiz

Muraleedharan

Henry

2019

Journal of Applied Physics

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We studied the anharmonic modal contributions to heat transfer at the interface of crystalline Si and amorphous SiO2 using the recently proposed interface conductance modal analysis (ICMA) method. Our results show that ~74% of the thermal interface conductance (TIC) arises from the extended modes, which occupy more than ~58% of the entire population of vibrational modes in the system. More interestingly, although the population of purely localized and interfacial modes on the SiO2 side is less than 6 times the population of partially extended modes, the contribution to TIC by these localized modes is more than twice that of the contribution from partially extended modes. Such an observation, once again proves the nonnegligible role of localized modes to facilitate heat transfer across systems with broken symmetries, and reiterates the fact that neglecting the contribution of localized modes in any modal analysis approach is an over-simplification of the actual mechanisms of heat transfer. Correctly pinpointing the modal contributions is of vital importance, since these values are directly utilized in determining the temperature dependent TIC, which is crucial to silicon on insulator (SOI) technologies with myriad applications such as microelectronics and optoelectronics.

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Section: Textmentioning

confidence: 52%

Interface conductance modal analysis of a crystalline Si-amorphous SiO2 interface

Gordiz

Muraleedharan

Henry

2019

Journal of Applied Physics

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“…More recent work from Giri et al has demonstrated significant enhancement in interfacial thermal transport for a SiOC:H/SiC:H interface through the emergence of high-frequency vibrational modes arising from atomic mass defects at the interface. 49 They were able to demonstrate a TBC approaching 1 GW/m 2 K for this material system.…”

Section: Acs Applied Materials and Interfacesmentioning

confidence: 90%

Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

Yates

Anderson

et al. 2018

ACS Appl. Mater. Interfaces

123

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The development of GaN-on-diamond devices holds much promise for the creation of high-power density electronics. Inherent to the growth of these devices, a dielectric layer is placed between the GaN and diamond, which can contribute significantly to the overall thermal resistance of the structure. In this work, we explore the role of different interfaces in contributing to the thermal resistance of the interface of GaN/diamond layers, specifically using 5 nm layers of AlN, SiN, or no interlayer at all. Using time-domain thermoreflectance along with electron energy loss spectroscopy, we were able to determine that a SiN interfacial layer provided the lowest thermal boundary resistance (<10 mK/GW) because of the formation of an Si-C-N layer at the interface. The AlN and no interlayer samples were observed to have TBRs greater than 20 mK/GW as a result of a harsh growth environment that roughened the interface (enhancing phonon scattering) when the GaN was not properly protected.

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“…Generally speaking, phonons with a certain frequency have a high likelihood to transmit through an interface only when phonons with this frequency exist on the other side of the interface or when specific modes that are local to the interface help the transmission of those phonons. [47][48][49][50][51][52] Therefore, the degree of DOS overlap between two adjacent materials has a significant effect on the TBC across an interface. Due to the small mass of carbon atoms and strong bonds among these carbon atoms in diamond, diamond has a very high cutoff frequency (the Debye temperature of diamond is 2230 K).…”

Section: Enhanced Thermal Transport Across Interfacesmentioning

confidence: 99%

Tunable Thermal Energy Transport across Diamond Membranes and Diamond–Si Interfaces by Nanoscale Graphoepitaxy

Cheng

Bai

Shi

et al. 2019

ACS Appl. Mater. Interfaces

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The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at interface between dissimilar materials. However, controlling and tuning heat transport across an interface and in the adjacent materials has so far drawn limited attention.In this work, we grow chemical-vapor-deposited (CVD) diamond on silicon substrates by graphoepitaxy and experimentally demonstrate tunable thermal transport across diamond membranes and diamond-silicon interfaces. We observed the highest diamond-silicon thermal boundary conductance (TBC) measured to date and increased diamond thermal conductivity due to strong grain texturing in the diamond near the interface. Additionally, non-equilibrium molecular-dynamics (NEMD) simulations and a Landauer approach are used to understand the diamond-silicon TBC. These findings pave the way for tuning or increasing thermal conductance in heterogeneously integrated electronics that involve polycrystalline materials and will impact applications including electronics thermal management and diamond growth.

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Small-mass atomic defects enhance vibrational thermal transport at disordered interfaces with ultrahigh thermal boundary conductance

Cited by 3 publications

References 37 publications

Interface conductance modal analysis of a crystalline Si-amorphous SiO2 interface

Interface conductance modal analysis of a crystalline Si-amorphous SiO2 interface

Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

Tunable Thermal Energy Transport across Diamond Membranes and Diamond–Si Interfaces by Nanoscale Graphoepitaxy

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