“…Recently, tin oxide (SnO 2 ) has become one of the most promising materials for electron transport layers due to its excellent properties. These include wide band gaps (∼3.6–4.5 eV), suitable band gap positions, high electron mobilities (240 cm 2 V −1 s −1 , which is about 100 times higher than that of TiO 2 ), and high carrier concentrations (>10 15 cm −3 )( Bai et al, 2023 ; Xu et al, 2022 ; zhou et al, 2023 ). Furthermore, SnO 2 materials are cost-effective, eco-friendly, and can be produced using various low-temperature solution preparation techniques, including the sol-gel, chemical bath deposition, spin coating, and spraying methods.…”