Small pitch 3D devices

Betta, Gian-Franco Dalla; Mendicino, R.; Sultan, D. M. S.; Boscardin, M.; Giacomini, G.; Ronchin, S.; Zorzi, N.; Darbo, G.; Meschini, M.; Messineo, A.

doi:10.22323/1.287.0028

Cited by 9 publications

(8 citation statements)

References 13 publications

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“…Columnar 3D pixel sensors [4,5] possess several intrinsic properties making them good candidates to create the layers of Figure 1: Schematic diagram of a planar (left) and a 3D (right) sensor, showing the charge carrier creation when a particle passes through, and the carriers movement before being collected on the electrodes. a tracking system exposed to an extreme radiation environment.…”

Section: Radiation Hardness and 3d Columnar Pixel Sensorsmentioning

confidence: 99%

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Results on proton-irradiated 3D pixel sensors interconnected to RD53A readout ASIC

Duarte-Campderros

Currás

Fernández

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of about 1 × 10 16 n eq cm −2 (1 MeV equivalent neutrons). This is the first time that one single collecting electrode fine pitch 3D sensors are irradiated up to such fluence bump-bonded to a fine pitch ASIC. The preliminary analysis of the collected data shows no degradation on the hit detection efficiencies of the tested sensors after high energy proton irradiation, demonstrating the excellent radiation tolerance of the 3D pixel sensors. Thus, they will be excellent candidates for the extreme radiation environment at the innermost layers of the HL-LHC experiments.

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Section: Radiation Hardness and 3d Columnar Pixel Sensorsmentioning

confidence: 99%

“…Detector and fabrication description can be found on ref. [4,5]. Figure 2 shows both single-sided FBK and double-sided IMB-CNM pixel layout sensors.…”

Section: Radiation Hardness and 3d Columnar Pixel Sensorsmentioning

confidence: 99%

Results on proton-irradiated 3D pixel sensors interconnected to RD53A readout ASIC

Duarte-Campderros

Currás

Fernández

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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“…Results on 3D Pixel Sensors for the CMS Upgrade at the HL-LHC developed in a collaboration with the Istituto Nazionale di Fisica Nucleare (INFN) [2]. The silicon wafers were produced with the Silicon-Silicon Direct Wafer Bond (DWB) technique.…”

Section: Pos(pixel2022)046mentioning

confidence: 99%

Results on 3D Pixel Sensors for the CMS Upgrade at the HL-LHC

Ceccarelli¹

2023

Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)

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The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new highradiation tolerant silicon pixel sensors, capable of withstanding, in the innermost tracker layer of the CMS experiment, fluences up to 1.5 × 10 16 n eq cm −2 (1 MeV equivalent neutrons) before being replaced. An extensive R&D program aiming at 3D pixel sensors, built with a top-side only process, has been put in place in CMS in collaboration with FBK (Trento, Italy) and CNM (Barcelona, Spain) foundries. The basic 3D cell size has an area of 25 × 100 µm 2 and is connected to a readout chip through a single, central electrode. A number of sensors were interconnected with the CMS pixel ReadOut Chip (CROC): built in 65 nm technology, the chip will be used in the pixel tracker of the CMS experiment during HL-LHC operations. In this paper the first test beam results of irradiated 3D CROC modules are reported. The analysis of collected data shows excellent performance and hit detection efficiencies close to 99% measured after a fluence of 1 × 10 16 n eq cm −2 while meeting the noise occupancy requirements of the innermost tracker layer.

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“…The 3D sensors in our R&D program [3], are developed and fabricated in the framework of INFN and FBK collaboration activity [4]. The substrates are p-type Si-Si Direct Bond Wafers (DBW), with a support wafer made of 500 µm thick, less than 1 Ohm cm resistivity, Czochralski (CZ) silicon.…”

Section: The Fbk 3d Pixel Sensorsmentioning

confidence: 99%

Radiation resistant innovative 3D pixel sensors for the CMS upgrade at the High Luminosity LHC

Meschini

Cassese

Ceccarelli

et al. 2020

Nuclear Instruments and Methods in Physics Research Section A:

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An extensive R&D program aiming at radiation hard, small pitch, 3D pixel sensors has been put in place between Istituto Nazionale di Fisica Nucleare (INFN, Italy) and FBK Foundry (Trento, Italy). The CMS experiment is supporting the R&D in the scope of the Inner Tracker upgrade for the High Luminosity phase of the CERN Large Hadron Collider (HL-LHC). In the HL-LHC the Inner Tracker will have to withstand an integrated fluence up to 2.3 × 10 16 n eq /cm 2. A small number of 3D sensors were interconnected with the RD53A readout chip, which is the first prototype of 65 nm CMOS pixel readout chip designed for the HL-LHC pixel trackers. In this paper results obtained in beam tests before and after irradiation are reported. Irradiation of a single chip module was performed up to a maximum equivalent fluence of about 1 × 10 16 n eq /cm 2. Analysis of the collected data shows excellent performance: spatial resolution in not irradiated (fresh) sensors is about 3 to 5 µm depending on the pixel pitch. Hit detection efficiencies are close to 99% measured both before and after the above mentioned irradiation fluence.

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Small pitch 3D devices

Cited by 9 publications

References 13 publications

Results on proton-irradiated 3D pixel sensors interconnected to RD53A readout ASIC

Results on proton-irradiated 3D pixel sensors interconnected to RD53A readout ASIC

Results on 3D Pixel Sensors for the CMS Upgrade at the HL-LHC

Radiation resistant innovative 3D pixel sensors for the CMS upgrade at the High Luminosity LHC

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