Small pixel pitch developments in the short wave infrared range at Lynred

Colin, Thierry; Aufranc, Sébastien; Fantini, Jerome; Bonvalot, Cyrille; Grille, Romain; Dagher, Gulnar; Renaudat-Saint-Jean, Margaux; Coussement, Jerome; Péré-Laperne, Nicolas

doi:10.1117/12.2664006

Cited by 5 publications

(1 citation statement)

References 11 publications

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“…The typical diffusion length in such devices could reach tens of µm [46]. MFT measurements were performed on 15 and 10 µm pitches leading to suitable values [47]. Further investigations will be required to assess the impact of the crosstalk in our photodiodes with such As the pixel pitch reduces, crosstalk between pixels becomes a major concern.…”

Section: Discussionmentioning

confidence: 99%

Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing

Tillement,

Cervera,

Baylet

et al. 2023

Sensors

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This paper presents the complete design, fabrication, and characterization of a shallow-mesa photodiode for short-wave infra-red (SWIR) sensing. We characterized and demonstrated photodiodes collecting 1.55 μm photons with a pixel pitch as small as 3 μm. For a 5 μm pixel pitch photodiode, we measured the external quantum efficiency reaching as high as 54%. With substrate removal and an ideal anti-reflective coating, we estimated the internal quantum efficiency as achieving 77% at 1.55 μm. The best measured dark current density reached 5 nA/cm2 at −0.1 V and at 23 °C. The main contributors responsible for this dark current were investigated through the study of its evolution with temperature. We also highlight the importance of passivation with a perimetric contribution analysis and the correlation between MIS capacitance characterization and dark current performance.

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Section: Discussionmentioning

confidence: 99%

Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing

Tillement,

Cervera,

Baylet

et al. 2023

Sensors

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SWIFT: a low SWaP wide distribution SWIR product line

Fraenkel,

Elishkov,

Reches

et al. 2024

Infrared Technology and Applications L

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Over the last decade a growing demand for imaging solutions in the short wave infra-red (SWIR) regime has stimulated technological investments aimed for cost and size reduction. This resulted in the development of smaller pitch, lower power focal-plane arrays (FPAs), enabling the production of a very compact and low-cost electrooptical systems for the SWIR band. SCD has been on the forefront of this technological wave developing the SWIFT family of 10 µm pitch InGaAs SWIR digital infrared detectors.Currently the SWIFT family consists of two products. The SWIFT 640 is a compact VGA version of the Cardinal1280 FPA embedded in a compact ceramic package. The module consists of dedicated proximity electronics boards providing power and timing to the readout circuit (ROIC) and enables communication and video to the system. It presents low noise imaging with very low dark current and excellent imaging under low light level conditions. In this work, we will elaborate on the electro-optical performance, low SWaP design considerations and the environmental endurance of this module.The second product -SWIFT 640 EIcombines daylight and low light level imaging with event-based imaging and multi spot laser tracking. Recently we described the architecture, key features, and preliminary characterization results. In this article, we will present detailed results for the ALPD detection sensitivity and false alarm rate (FAR) as a function of laser pulse intensity and background flux. We will also present our capability to track and decode simultaneously several laser spots.

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Detector size selection for long-range targeting performance in the extended shortwave infrared band

Wiley,

Katheder,

Follansbee

et al. 2024

Infrared Imaging Systems: Design, Analysis, Modeling, and Testing XXXV

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Interest in the eSWIR band is growing due to focal plane array technology advancements with mercury cadmium telluride and type-II superlattice materials. As design and fabrication processes improve, eSWIR detector size, weight, and power can now be optimized. For some applications, it is desirable to have a smaller detector size. Reduced solar illumination in the 2 to 2.5 µm spectral range creates a fundamental limit to passive imaging performance in the eSWIR band where the resolution benefit of small detectors cannot out-compete the reduced SNR in photon-starved environments. This research explores the underlying theory using signal-to-noise ratio radiometry and modeled target discrimination performance to assess the optimal detector size for eSWIR dependent upon illumination conditions. Finally, we model continuous-wave laser illumination in the eSWIR band to compare the effect of detector size on active and passive imaging for long-range object discrimination.

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Small pixel pitch developments in the short wave infrared range at Lynred

Cited by 5 publications

References 11 publications

Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing

Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing

SWIFT: a low SWaP wide distribution SWIR product line

Detector size selection for long-range targeting performance in the extended shortwave infrared band

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