Small Scale Deformation using Advanced Nanoindentation Techniques

Abstract

has over twenty-five years of experience in the integrated circuit (IC) fabrication industry and in the academic environment. At Texas Instruments Inc. (Dallas, Texas), Prof. Tsui developed Plasma Enhanced Chemical Vapor Deposited (PECVD) porous low-k and ultra-low-k thin films to be used for interlayer dielectric and dielectric barriers for 90 nm, 65 nm, and 45 nm technology node. He also developed plasma-based processes to enhance electrical and chip reliability performance. In addition to the unit process module development, Professor Tsui has also demonstrated his expertise in wafer-level integration, yield ramp, TDDB reliability, and in-fab and in-field mechanical reliability. In 2007, Professor Tsui began his role at the University of Waterloo (Ontario, Canada) where he has conducted research in the areas of porous ultra-low-dielectric constant materials, nano-mechanics, electron beam lithography, and nanoindentation.