Small-scale production of 4-cm/sup 2/ ITO/InP photovoltaic solar cells

Solar Cells on the Base of Semiconductor-Insulator-Semiconductor Structures

“…The record efficiency of 18.9% was obtained in (Li et al, 1989) for ITO/InP structures, when the ITO layer was deposited by magnetron dispersion on p + p/InP treated preliminary in Ar/O 2 plasma. Using the above-described sputtering process, a small-scale production of 4cm 2 ITO/InP photovoltaic solar cells has been organized at Solar Energy Research Institute (now National Renewable Energy Laboratory), Golden, Colorado, the USA (Gessert et al, 1991). Although only a small number of the 4cm 2 ITO/InP cells (approximately 10 cells total) were fabricated, the average cell efficiency is determined to be 15.5%, the highest cell performance being 16.1% AM0.…”

“…Basic investigations of the ITO/Si SIS structures have been carried out and published in the USA (DuBow et al, 1976;Mizrah et al, 1976;Shewchun et al, 1978; Theoretical and experimental aspects of the processes that take place in these structures are examined in those papers. Later on the investigations of SC based on SIS structures using, as an absorber component, Si, InP and other semiconductor materials have been continued in Japan (Nagatomo et al, 1982;Kobayashi, et al, 1991), India (Vasu & Subrahmanyam, 1992;Vasu et al, 1993), France (Manifacier & Szepessy, 1977;Caldererer et al, 1979), Ukraine (Malik et al, 1979;Malik et al, 1980), Russia (Untila et al, 1998), the USA (Shewchun et al, 1980;Gessert et al, 1990;Gessert et al, 1991), Brasil (Marques & Chambouleyron, 1986) and the Republic of Moldova (Adeeb et al, 1987;Botnariuc et al, 1990;Gagara et al, 1996;Simashkevich et al, 1999). The results of SIS structures fabrication by different methods, especially by pyrolitic pulverization and radiofrequency sputtering, are discussed in those papers.…”