Small-Signal Modeling of GaAs – pHEMT Using Direct Extraction Method

Bakkali, Moustapha El; Elkhaldi, Said; Elftouh, Hanae; Touhami, Naima Amar

doi:10.1109/iscv49265.2020.9204237

Cited by 1 publication

(1 citation statement)

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“…Compared with MOSFET, HBT and other devices, pHEMT devices have better noise performance and thermal stability [15,16]. Compared with HEMT, the pHEMT has lower noise and higher electron mobility [17,18]. Therefore, GaAs pHEMT, with excellent RF characteristics and acceptable cost, was selected in this paper.…”

Section: Introductionmentioning

confidence: 99%

Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

Zhao

Wang

et al. 2022

Electronics

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This paper proposes a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity. Bias and parasitic parameters derived wide bandpass (BPDWB) matching networks and a cascode with dual feedbacks are introduced for broadband performance. Matching network design procedures are demonstrated, and results show that the frequency response of the network fits the target impedance well from 1 GHz to 3.5 GHz. The proposed BPDWB network improves the design efficiency and enhances the prediction accuracy of impedance matching. The proposed LNA in 0.25 μm GaAs pseudomorphic high electron mobility transistor (GaAs pHEMT) technology realizes a minimum NF of 0.45 dB at 1.6 GHz where the NF is less than 0.55 dB within the operating frequency band. A flat gain of 22.5–25.2 dB is achieved with the input voltage standing wave ratio (VSWR) below 1.22 and output VSWR less than 2.5. In addition, the proposed LNA has good linearity where the output third-order intercept point (OIP3) is better than +31.5 dBm, and the output 1 dB compression point (OP1dB) is better than +19 dBm over the wide frequency range.

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Section: Introductionmentioning

confidence: 99%